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Nitrogen-plasma Treatment of Parallel-aligned SnO2-nanowire Field-effect Transistors
최용희,나준홍,김재성,주민규,김규태,강필수 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.4
Nitrogen (N2)-plasma treatment and polymethylmethacrylate (PMMA) passivation were carriedout to stabilize the electrical properties of parallel-aligned tin-dioxide (SnO2)-nanowire field-effecttransistors. Treatment led to a positive shift in the threshold voltage, Vth, with a reduction inthe hysteresis in the transfer curves of more than 30% compared to the case without treatment. Passivation was carried using a PMMA coating to prevent changes in the electrical properties overtime. X-ray photoelectron spectroscopy and Auger electron spectroscopy were employed to determinethe chemical mechanisms that resulted in the changes in the electrical properties over time,those changes being attributed to the recombination of oxygen vacancies and carbon contaminantson the surface of the SnO2 nanowires with oxygen in the ambient air.