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        Nitrogen-plasma Treatment of Parallel-aligned SnO2-nanowire Field-effect Transistors

        최용희,나준홍,김재성,주민규,김규태,강필수 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.4

        Nitrogen (N2)-plasma treatment and polymethylmethacrylate (PMMA) passivation were carriedout to stabilize the electrical properties of parallel-aligned tin-dioxide (SnO2)-nanowire field-effecttransistors. Treatment led to a positive shift in the threshold voltage, Vth, with a reduction inthe hysteresis in the transfer curves of more than 30% compared to the case without treatment. Passivation was carried using a PMMA coating to prevent changes in the electrical properties overtime. X-ray photoelectron spectroscopy and Auger electron spectroscopy were employed to determinethe chemical mechanisms that resulted in the changes in the electrical properties over time,those changes being attributed to the recombination of oxygen vacancies and carbon contaminantson the surface of the SnO2 nanowires with oxygen in the ambient air.

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        Self-heating Characteristics of Mo Electrodes and MoS2 FET Using IR Thermal Imaging Microscope

        Gwanmu Lee,나준홍,Dongseok Suh 한국물리학회 2020 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.76 No.6

        In this study, the static and transient thermal characteristics of molybdenum electrodes induced by self-heating process are reported. The corresponding local temperatures of the electrodes were measured using an infrared thermal imaging microscope system. Maximum temperature is observed to increase (80 ~ 260 °C depending on the width of the electrode) at the narrow region of the electrodes. In addition, the measured temperature was linearly proportional to the applied power per unit width. The transient thermal measurement performed in the range between 10 Hz and 100 kHz has shown that the temperature fluctuation begins to decrease at 1 kHz and saturate to a certain level. In addition, the self-heating effect on an atomically-thin two-dimensional molybdenum disulfide field-effect transistor operating in ambient conditions was also observed.

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