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RISS 인기검색어
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PLD를 이용한 ZnO 박막의 구조에 산소 분압 및 후열처리 온도가 미치는 영향
조대형(Dae-Hyung Cho),김지홍(Ji-Hong Kim),구상모(Sang-Mo Koo),문병무(Byung-Moo Moon) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
ZnO thin films were deposited on Al₂O₃ (alumina) substrates by pulsed laser deposition (PLD) using Nd:YAG laser with a wavelength of 355㎚, at room temperature and oxygen partial pressure of 1, 10, 30, 50, 100, and 200mTorr. Furthermore, deposited ZnO thin films were post-annealed at 400, 550, 600℃. The effects of oxygen partial pressure and post-annealing temperature on structural properties of the deposited films have been investigated by means of X-ray diffraction (XRD), and atomic force microscope (AFM), respectively. It has been found that ZnO thin films exhibit c-axis orientation, exhibiting an increased full width at half maximum (FWHM) value of (002) diffraction peak at 30m Torr oxygen partial pressure and higher post-annealing temperature (700℃).
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Plasma Etch Damage가 (100) SOI에 미치는 영향의 C-V 특성 분석
조영득,김지홍,조대형,문병무,조원주,정홍배,구상모,Jo, Yeong-Deuk,Kim, Ji-Hong,Cho, Dae-Hyung,Moon, Byung-Moo,Cho, Won-Ju,Chung, Hong-Bay,Koo, Sang-Mo 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.
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무선통신소자제작을 위한 45GHz $f_{T}$ 및 50GHZz $f_{max}$ SiGe BiCMOS 개발
황석희,조대형,박강욱,이상돈,김남주,Hwang Seok-Hee,Cho Dae-Hyung,Park Kang-Wook,Yi Sang-Don,Kim Nam-Ju 대한전자공학회 2005 電子工學會論文誌-SD (Semiconductor and devices) Vol.42 No.9
최근 Mobile용 RF ICs 적용을 위한 RF CMOS 기술과 함께 핵심 기술로 SiGe Heterojunction Bipolar Transistor (HBT) 소자 개발의 중요성이 증대되고 있다. 본 논문은 현재 5GHz 동작 수준의 RF제품에서 주로 사용되는 기술인 $0.35\{mu}m$ 설계 Rule을 적용하여 $f_{max}$ 50GHz에서 동작하는 SiGe BiCMOS 기술 개발에 대한 내용을 논의한다. 본 SiGe HBT에 사용하는 에피막 성장 기술은 Trapezoidal Ge base profile 및 non-selective 방식이고, 에미터 RTA 조건 및 SiGe HBT base에 대한 Vertical Profile 최적화를 수행하였다. hFE 100, $f_{T}\;45GHz,\;NF_{min}\;0.8dB$ 수준으로 우수한 특성 및 기술 경쟁력을 갖는 SiGe BiCMOS 공정 개발 및 양산 기술을 확보하였다. 또한, 기존의 0.35um설계 Rule공정 target떼 부합되는 CMOS소자를 포함시켰으며, RF용 Passive소자로 높은 Q값을 갖는 MIM capacitor(1pF, Q>80), Inductor(2nH $Q\~$l2.5)를 제공하였다 A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.
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Melt - Spun Fe - Pr - C 합금의 자기적 특성 조사
장태석(Tae-Suk Jang),조대형(Dae-Hyung Cho) 한국자기학회 1997 韓國磁氣學會誌 Vol.7 No.4
Changes in phases, microstructures, and magnetic properties by the variation of quench rate and heat treatment were investigated for melt-spun Fe_(77)Pr_(15)C_8 ribbons. The amorphization of as-spun ribbons increased as the quench rate increased. As a result, the ribbon quenched at 40 m/s was almost entirely amorphous. Similarly to cast alloys, the primary phase in crystalline ribbons quenched at 10 m/s was α-Fe followed by the secondary Fe_(17)Pr₂Cx. Crystalline phases were still dominant in the ribbon spun at 20 m/s, but in this case crystallization of Fe_(17)Pr₂Cx was remarkable with a little suppression of α-Fe. At 30 m/s an amorphous phase obviously dominated in the as-spun ribbons with small fraction of crystals. Therefore, substantial amount of hard magnetic Fe₁₄Pr₂C was not obtained from the as-spun state but, as in cast alloys, produced only by a solid-state transformation. Within a few minutes fine grains of Fe₁₄Pr₂C were easily obtained at relatively low temperature when the degree of amorphization of as-spun ribbons was higher. The grain size of Fe₁₄Pr₂C was well less than 1㎛. The ribbons quenched at 20 or 30 m/s yielded higher coercivities after heat treatment.
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