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VCR 헤드 제조시 $SiO_2$박막과 유리의 계면 결함
윤능구,황재웅,고경현,안재환,제해준,홍국선,Yun, Neung-Gu,Hwang, Jae-Ung,Go, Gyeong-Hyeon,An, Jae-Hwan,Je, Hae-Jun,Hong, Guk-Seon 한국재료학회 1994 한국재료학회지 Vol.4 No.1
Mn-Zn ferrite를 가공하여 VCR헤드의 제조과정에서 비자성체 gap용 $SiO_{2}$증착층과 유리와의 접합시 유리내에 기포 형태의 결함이 발생하는 경우가 있다. 기판의 조도나 $SiO_{2}$의 증착속도의 영향을 분석한 결과, 기포의 생성원인이 $SiO_{2}$ 증착층과 접합유리의 융착시 계면에 존재하는 요철의 불완전한 충진에 의한 것으로 나타났다. 따라서 이러한 기포생성을 억제시키는 위해서는 기판을 최대한 경면 연마시켜 표면조도를 작게하고 $SiO_{2}$증착속도를 조절함으로써 $SiO_{2}$증착층의 표면조도를 작게하여 유리 융착시 계변의 요철 크기를 작게해야 한다. 기판을 0.05$\mu\textrm{m}$알루미나 분말로 경면연마시키고, 10% Osub 2/분압을 갖는 Ar plasma상태하로 조절된 증착속도로 즈악된 $SiO_{2}$증착층과 접합유리의 융착시 기포가 전혀 발생치 않았다. The bonding behavior of $SiO_{2}$ thin film and glass during VCR head fabrication was investigated, varying the surface roughness of substrate and the sputtering parameter. Insufficient fillings of grooves In the $SiO_{2}$ film with glass was postulated to give rise to the generation of bubble in the glass. The surface roughness of $SiO_{2}$ film was found to depend on that of substrate. The lower the deposition rate, the smoother the surface of film. The bubble free glass after bonding could be obtained using substrate polished with 0.05$\mu\textrm{m}$ $Al_2O_3$ powder under the sputtering condition of 10% oxygen pressure.
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낮은 소스전력-펄스플라즈마를 이용하여 증착한 실리콘 나이트라이드 박막 특성
이수진,김병환,윤능구 한국표면공학회 2010 한국표면공학회 학술발표회 초록집 Vol.2010 No.11
본 연구에서는 상온에서 Pulsed-PECVD 를 이용하여 SiN 박막을 증착하였다. 변수들에 대한 Duty ratio의 영향을 소스전력의 함수로 살펴보았으며, 박막 특성과의 관계도 규명하였다. 진단 데이터는 이온에너지 분석 시스템을 이용하였다. SiN 박막의 증착에는 SiH₄-N₂ 가스를 사용하였으며, 매우 낮은 소스전력 20 W에서 Duty ratio를 30-100%증가하여, 이온에너지 분포와 증착률과 굴절률 변화를 살펴본다. 증착된 박막은 700 Å/min 이상의 높은 증착률과 2.5 이상의 높은 굴절률을 보인다. 증착률과 굴절률은 낮은 이온에너지 flux와의 강한 연관성을 보인다.
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민철홍,박성진,윤능구,김태선,Min, Chul-Hong,Park, Sung-Jin,Yoon, Neung-Goo,Kim, Tae-Seon 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.9
Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.
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기상 자기조립박막 법을 이용한 나노임프린트용 점착방지막 형성 및 특성평가
차남구,김규채,박진구,정준호,이응숙,윤능구,Cha, Nam-Goo,Kim, Kyu-Chae,Park, Jin-Goo,Jung, Jun-Ho,Lee, Eung-Sug,Yoon, Neung-Goo 한국재료학회 2007 한국재료학회지 Vol.17 No.1
Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.
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민철홍(Chul Hong Min),박성진(Sung-Jin Park),윤능구(Neung-goo Yoon),김태선(Tae Seon Kim) 한국표면공학회 2007 한국표면공학회지 Vol.40 No.4
Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.
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