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RTCVD에 의한 다결정 $Si_{1-x}Ge_x$ 박막 증착
김재중,이승호,소명기,Kim, Jae-Jung,Lee, Seung-Ho,So, Myeong-Gi 한국재료학회 1995 한국재료학회지 Vol.5 No.6
The Poly-S $i_{1-x}$G $e_{x}$ thin films were deposited on oxidized Si wafer by RTCVD(rapid thermal chemical vapor deposition) using Si $H_4$and Ge $H_4$, at 450 ~5$50^{\circ}C$. The variation of Ge mole fraction and the deposition rate of S $i_{1-x}$G $e_{x}$ thin film were studied as a function of the deposition temperature and the Ge $H_4$/Si $H_4$input ratio, and the crystal phase and the surface roughness were studied by XRD and AFM(atomic force microscopy), respectively. The experimental results showed that the activation energy for the deposition of poly-S $i_{1-x}$G $e_{x}$ was about 32~37Kca /mol and the deposition rate of S $i_{1-x}$G $e_{x}$ thin films was increased with increasing the deposition temperature and the input ratio. From the analysis of composition, it was known that the Ge mole fraction within the poly-S $i_{1-x}$G $e_{x}$ thin film was decreased with decreasing the input ratio and increasing the deposition temperature. As-deposited S $i_{1-x}$G $e_{x}$ thin films were polycrystalline over the entire experimental range. But those were amorphous at the deposition temperature of 450, 475$^{\circ}C$ and the input ratio of 0.05. By adding the Ge $H_4$, poly-S $i_{1-x}$G $e_{x}$ thin film were deposited at relatively lower deposition temperatures($\leq$ 5$50^{\circ}C$) than those of conventional poly-Si(>$600^{\circ}C$). From surface roughness measurement of poly-S $i_{1-x}$G $e_{x}$ it was found that the surface roughness( $R_{i}$ ) increased with increasing the deposition temperature and input ratio.and input ratio. Oxidized Si wafer 위에 반응가스로 Si $H_4$과 Ge $H_4$을 사용하여 RTCVD(rapid thermal chemical vapor deposition)법으로 증착온도 450~5$50^{\circ}C$에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 증착하였다. 증착된 S $i_{1-x}$, G $e_{x}$ 박막은 증착온도와 Ge $H_4$Si $H_4$입력비 변화에 따른 Ge몰분율 변화와 증착속도에 대해 고찰하였으며, XRD와 AFM(atomic force microscopy)등을 이용하여 결정상과 표면거칠기 등을 조사하였다. 실험결과, 다결정 S $i_{1-x}$G $e_{x}$ 박막은 32~37 Kcal/mole의 활성화에너지 값을 가졌으며 증착속도는 증착온도와 입력비 중가에 따라 증가하였다. 또한 조성분석으로부터 입력비 감소와 증착온도 증가에 따라 Ge몰분율이 감소함을 알 수 있었다. 증착된 S $i_{1-x}$G $e_{x}$ 박막은 450, 475$^{\circ}C$에서 임력비가 0.05일때 비정질 형태로 존재하였으며 그 이외의 실험영역에서는 다결정 형태로 존재하였다. 기존의 다결정 Si 중착온도($600^{\circ}C$이상)와 비교하여 Ge $H_4$을 첨가함으로써 비교적 낮은온도(5$50^{\circ}C$이하) 영역에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 얻을 수 있었다. 또한 증착층의 표면거칠기를 측정한 결과, 증착온도와 입력비가 증가함에 따라 표면 거칠기( $R_{i}$ )가 증가함을 알 수 있었다.을 알 수 있었다.
비만 범용 처방(處方)에 대한 탕전후(湯煎後) 경락 기능 진단기(QRIS)의 비만 연관 Code측정 및 수침후(水浸後) Free Radical 측정기를 이용한 측정에 대한 고찰
김재중,임형호,선유진,이동훈,Kim, Jae-Joong,Lim, Hyung-Ho,Sun, Yu-Jin,Lee, Dong-Hoon 척추신경추나의학회 2000 대한추나의학회지 Vol.1 No.1
Oryeong-San, Pangpungtongseong-San, Rangkyeoksanwha-Tang, Sipeemikwanjoong -Tang and Taeumjoui-Tang are not only examined using the code which are related to overweight in the QRIS but are also investigated the level of Free Radical using the Free Radical Measurement after steeping those 5 prescriptions in water. The results are as follows: 1. We indicated in the study of QRIS that 5 kinds of medicines which used most frequently In the treatment of the obesity appeared to affect the Immune system, spleen, kidneys, pancreas, the fatigue toxicity, TSH, and the metabolic disability but did not influence high on the contents of overweight and those of fatty cell, as well. in addition, there were no significant differences between the prescriptions as regards testosterone and progesterone. 2. In the Free Radical Measurement, Rangkyeoksanwha-Tang evaluated significantly high level of Free Radical, whereas others appear to have the similar level of Free Radical. These findings suggest that the treatment of the obesity affects particular body parts with respect to the control of overweight, although those medicines are not related directly to the areas(such as fatty cell Code), it is possible that they influence on the cure for the obesity. Furthermore, they indicate that with soaking prescription, Free Radical is not produced as much as we expected.
논문 : 기계적 성질 ; 용탕단조된 Mg-Al-Zn-Si합금의 미세조직 및 파괴거동
김재중 ( Jae Joong Kim ),추성훈 ( Seong Hun Choo ),김도향 ( Do Hyang Kim ),김락준 ( Nack J. Kim ) 대한금속재료학회 ( 구 대한금속학회 ) 1998 대한금속·재료학회지 Vol.36 No.6
Microstructure and fracture behavior of the squeeze cast Mg-Al-Zn-Si alloys (AZ91-Si, AZ51-Si, AZ51 Si-Ca) have been investigated in the present study. To clarify the fracture behavior, in-situ fracture test and fractographic observation were conducted. The higher Al content promoted formation of the polygonal type Mg2Si, but resulting in reduction of the ductility due to increase in amount of Mg17Al12 and to presence of coarse Mg2Si. The lower Al content favored formation of the chinese script type Mg2Si which promoted the brittle fracture along the Mg2Si/matrix interface. AZ51-Si alloy had a higher ductility than AZ91-Si, because a number of slip lines were developed inside grains and cracks were blunted by matrix. The addition of Ca eliminated the chinese script type Mg2Si. Instead, fine Mg2Si particles were present in a polygonal shape, resulting in improvement of mechanical properties.