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Nano-CMOSFET를 위한 플라즈마-질화막의 초기 산화막 성장방법에 따른 소자 특성과 저주파 잡음 특성 분석
주한수,한인식,구태규,유옥상,최원호,최명규,이가원,이희덕,Joo, Han-Soo,Han, In-Shik,Goo, Tae-Gyu,Yoo, Ook-Sang,Choi, Won-Ho,Choi, Myoung-Gyu,Lee, Ga-Won,Lee, Hi-Deok 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.1
In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.
Nano-scale PMOSFET에서 Plasma Nitrided Oixde에 대한 소자 특성의 의존성
한인식,지희환,구태규,유욱상,최원호,박성형,이희승,강영석,김대병,이희덕,Han, In-Shik,Ji, Hee-Hwan,Goo, Tae-Gyu,You, Ook-Sang,Choi, Won-Ho,Park, Sung-Hyung,Lee, Heui-Seung,Kang, Young-Seok,Kim, Dae-Byung,Lee, Hi-Deok 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7
In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.
Lanthanum이 혼입된 고유전 게이트 산화막에서의 온도에 따른 캐리어 이동 특성
권혁민(Hyuk-Min Kwon),최원호(Won-Ho Choi),한인식(In-Shik Han),구태규(Tae-Gyu Goo),나민기(Min-Ki Na),유욱상(Ook-Sang Yoo),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, we analyzed the mechanisms of gate leakage current for high performance MOSFETs with La-incorporated hafnium oxide. Barrier height and trap energy level are extracted using different temperature. The barrier height (1.115eV) of Schottky emission was similar to previously reported value and the trap energy level (1.133eV) of Frenkel-Poole emission was slightly low than reported value, which may be due to the La-incorporation.