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      • KCI등재

        Improvement of Resistive Switching Uniformity in TiO_x Film by Nitrogen Annealing

        Yingtao Li,Yan Wang,Su Liu,Shibing Long,Hangbing Lv,Qin Wang,Sen Zhang,Ming Liu 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.3

        The uniformity of resistive switching parameters is important to resistive random access memory (RRAM) device development. This work reports a remarkably improved uniformity of resistive switching parameters in atomic-layer-deposited titanium-oxide films. The broad variations of the resistive switching parameters in the as-deposited TiOx films can be improved by nitrogen annealing. Based on the results of the X-ray photoelectron spectroscopy (XPS) depth profile, the improved uniformity of resistive switching in the nitrogen-annealed TiO_x films may result from the higher density of oxygen vacancies in TiO_x films due to nitrogen annealing.

      • KCI등재

        Expression of RUNX2/LAPTM5 in the Induction of MC3T3-e1 Mineralization and Its Possible Relationship with Autophagy

        Xing Lei,Li Yanqin,Li Wenhao,Liu Rong,Geng Yuanming,Ma Weiqun,Qiao Yu,Li Jianwen,Lv Yingtao,Fang Ying,Xu Pingping 한국조직공학과 재생의학회 2022 조직공학과 재생의학 Vol.19 No.6

        BACKGROUND: The study aims to correlate osteogenesis with autophagy during the mineralization induction of MC3T3-e1 through exploring the expression of runt-related transcription factor 2 (RUNX2)/lysosomal-associated transmembrane protein 5 (LAMPT5). METHODS: The induction of mineralization in MC3T3-e1 was followed by detecting the expressions of osteogenesisrelated indexes such as RUNX2, alkaline phosphatase (ALP), osteocalcin (OCN), and LAPTM5 using RT-qPCR and Western blot from 0 to 14 days. Transmission electron microscope was utilised in visualizing the alterations of autophagosomes, which was followed by immunofluorescence detecting the subcellular localization of autophagy-related index sequestosome 1 (P62) and microtubule-associated protein 1 light 3 (LC3) protein and scrutinising the expression of P62 mRNA and P62 and LC3 proteins. RESULTS: Induction of MC3T3-e1 mineralization demonstrated an increased expression of osteogenesis-related indicators such as RUNX2, ALP, OCN, and LAPTM5 (p\0.05), as evident from the results of RT-qPCR and Western blot. Meanwhile, the expression of autophagosomes increased one day after mineralization induction and then experienced a gradual decline, and enhanced expression of LC3 protein was noted on days 1–2 of mineralization induction but was then followed by a corresponding reduce. In contrast, a continuous increase was reported in the expression of P62 mRNA and protein, respectively (p\0.05). Up- and down-regulating RUNX2/LAPTM5 expression alone confirmed the aforementioned results. CONCLUSION: It was therefore proposed that RUNX2 may be responsible for an early increase and then a gradual decrease in LAPTM5-mediated autophagy through the regulation of its high expression. Meanwhile, increased LAPTM5 expression in osteogenic mineralization presumed that RUNX2/LAPTM5 promoted autophagy and osteogenic expression, which may play a bridging role in the regulation of autophagy and osteogenesis.

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        A Fast Anti-jamming Decision Method Based on the Rule-Reduced Genetic Algorithm

        ( Jin Hui ),( Song Xiaoqin ),( Wang Miao ),( Niu Yingtao ),( Li Ke ) 한국인터넷정보학회 2016 KSII Transactions on Internet and Information Syst Vol.10 No.9

        To cope with the complex electromagnetic environment of wireless communication systems, anti-jamming decision methods are necessary to keep the reliability of communication. Basing on the rule-reduced genetic algorithm (RRGA), an anti-jamming decision method is proposed in this paper to adapt to the fast channel variations. Firstly, the reduced decision rules are obtained according to the rough set (RS) theory. Secondly, the randomly generated initial population of the genetic algorithm (GA) is screened and the individuals are preserved in accordance with the reduced decision rules. Finally, the initial population after screening is utilized in the genetic algorithm to optimize the communication parameters. In order to remove the dependency on the weights, this paper deploys an anti-jamming decision objective function, which aims at maximizing the normalized transmission rate under the constraints of minimizing the normalized transmitting power with the pre-defined bit error rate (BER). Simulations are carried out to verify the performance of both the traditional genetic algorithm and the adaptive genetic algorithm. Simulation results show that the convergence rates of the two algorithms increase significantly thanks to the initial population determined by the reduced-rules, without losing the accuracy of the decision-making. Meanwhile, the weight-independent objective function makes the algorithm more practical than the traditional methods.

      • KCI등재

        Resistive switching behavior and mechanism of room-temperaturefabricated flexible Al/TiS2-PVP/ITO/PET memory devices

        Deyuan Lyu,Cong Hu,Yuting Jiang,Na Bai,Qi Wang,Deyan He,Jing Qi,Yingtao Li 한국물리학회 2019 Current Applied Physics Vol.19 No.4

        The mixture of two-dimensional (2D) TiS2 nanoflakes and polyvinylpyrrolidone (PVP) exhibits a nonvolatile, bipolar resistive switching behavior with a low resistance state (LRS)/high resistance state (HRS) current ratio of ∼102 in the devices with a flexible Al/TiS2-PVP/indium tin oxide (ITO)/polyethylene terephthalate (PET) structure. The polymer-assistant liquid-phase exfoliation of 2D nanoflakes from TiS2 bulk material is processed in low-boiling solvent. And the fabrication process of these devices is performed entirely at room temperature. Such an energy-saving and scalable production process indicates a huge potential of large-scale industrial application. The AFM and TEM characterizations showed that the exfoliated 2D TiS2 are flakes at micrometer scale with a layer-number of mostly 7 or 8. Both the HRS and the LRS can be kept for more than 104 s. The endurance of devices was obtained over 100 direct current (DC) sweeping cycles with remarkable separations between different resistive states. The distributions of writing (set) and erasing (reset) voltages show that set and reset voltages are small (< 2 V). Also, the resistive switching characteristics of the devices are stable during 1000 bending cycles. The switching behavior is explained by the thinning and recovery of Schottky barriers within devices.

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