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Improvement of Resistive Switching Uniformity in TiO_x Film by Nitrogen Annealing
Yingtao Li,Yan Wang,Su Liu,Shibing Long,Hangbing Lv,Qin Wang,Sen Zhang,Ming Liu 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.3
The uniformity of resistive switching parameters is important to resistive random access memory (RRAM) device development. This work reports a remarkably improved uniformity of resistive switching parameters in atomic-layer-deposited titanium-oxide films. The broad variations of the resistive switching parameters in the as-deposited TiOx films can be improved by nitrogen annealing. Based on the results of the X-ray photoelectron spectroscopy (XPS) depth profile, the improved uniformity of resistive switching in the nitrogen-annealed TiO_x films may result from the higher density of oxygen vacancies in TiO_x films due to nitrogen annealing.