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ZhEng, D. W.,Huang, Y. P.,Tang, T. A.,Cui, Q.,Li, A. Z.,Zhou, S. X.,He, Z. J.,Chen, Z.,Zhang, X. J.,Kwor, R. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
A novel process for silicon on insulator(SOI) technology has been presented. Single crystal Si is grown by molecular beam epitaxy(MBF) on a porous silicon(PS) system consisting of two layers of PS with different microstructures. Subsequent lateral oxidation converts the structure to SOI wish excellent insulation property. Si islands with a width of 135㎛ and low doping concentration have been achieved.
Xiao-Yong Zhou,Yan Shen,Er-Tao Hu,Jian-Bo Chen,Yuan Zhao,Ming-Yu Sheng,Jing Li,Yu-Xiang Zheng,Hai-Bin Zhao,Liang-Yao Chen,Wei Li,Xun-Ya Jiang,이영백,David W. Lynch 한국광학회 2013 Current Optics and Photonics Vol.17 No.1
Based on the dispersive feature of the dielectric function of noble metals and the wave vector conservation in physics, both the plasma effect and the complex refractive index, which are profoundly correlated to the complex dielectric function and permeability, have been studied and analyzed. The condition to induce a bulk or a surface plasma in the visible region will not be satisfied, and there will be one solution for the real and the imaginary parts of the refractive index, restricting it only to region I of the complex plane. The results given in this work will aid in understanding the properties of light transmission at the metal/dielectric interface as characterized by the law of refraction in nature.