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Yin, Q.Q.,Chang, J.,Zuo, R.Y.,Chen, L.Y.,Chen, Q.X.,Wei, X.Y.,Guan, Q.F.,Sun, J.W.,Zheng, Q.H.,Yang, X.,Ren, G.Z. Asian Australasian Association of Animal Productio 2010 Animal Bioscience Vol.23 No.2
In order to improve the availability of phytase and probiotics together, a phytase gene from Aspergillus ficuum has been expressed in Lactobacillus. In this study, the transformed Lactobacillus with phytase gene was fed to pigs to determine its effect on pig production, feed conversion and gut microbes. Forty eight, 60-day-old, castrated pigs (Duroc${\times}$Landrace${\times}$Pietrain) were assigned to 6 groups, 8 pigs for each group. Group 1 was the control, group 2 was added with chlortetracycline (500 mg/kg), group 3 was added with the transformed Lactobacillus (500 mg/kg) with 20% (w/w) of calcium monohydrogen phosphate (CMP, $CaHPO_{4}$) removed, group 4 was added with the natural Lactobacillus (500 mg/kg) with 20% (w/w) of CMP removed, group 5 was added with the transformed Lactobacillus (500 mg/kg) with 40% (w/w) of CMP removed, group 6 was added with phytase (500 mg/kg) with 40% (w/w) of CMP removed. The results showed: i) the average daily gain (ADG) was improved in groups 2, 3 and 4 (p<0.05); ii) the diarrhea rates in the groups added with Lactobacillus were lower than in the other groups (p<0.05), in which the transformed Lactobacillus had more effect on reducing digestive disease; iii) the transformed Lactobacillus was most effective in improving the digestibilities of crude protein (CP), calcium (Ca), phosphorus (P), compared with the other groups (p<0.05); iv) Lactobacillus could increase lactic acid bacterium number and ammonia concentrations, and decrease pH values and E. coli number in pig feces (p<0.05); v) the phytase activity in the feces of pigs fed with the transformed Lactobacillus was 133.32 U/g, which was higher than in group 4 (9.58 U/g, p<0.05), and was almost the same as group 6 (135.94 U/g); vi) the transformed Lactobacillus could increase serum concentrations of IgA, triglyceride, and glutamic oxaloacetic transaminase activity (p<0.05), and had no significant effect on other serum indexes (p>0.05).
Ethanedinitrile Update: As A Potential Alternative for Methyl Bromide in Timber Fumigation
B.H. LEE,W. HUH,T.J. Kim,S.H. CHEON,S.H. CHEON,Y.L. REN 한국응용곤충학회 2008 한국응용곤충학회 학술대회논문집 Vol.2008 No.05
In Korea, methyl bromide(MeBr) is the only registered fumigant for quarantine application in imported timbers and wood packaging materials to control foreign wood-destroying pest. Under a agreement in the Clean Air Act and the Montreal Protocol to MeBr's ozone depleting properties, the use of MeBr is now strictly restricted and phased out year by year, even though there are exemptions for QPS (Quarantine and Pre-shipment) and CUE (Critical Use Exemption). However, due to increasing of global trades and protection of agro-ecosystem in imported counties against quarantine pests, MeBr in QPS use is increasing (16,304t in 2005, approximately 8.7% increase based on 1996), and domestic consumption of MeBr is recorded up to 938t (annual average among 2003 and 2005), especially the 67% percent (628t) of total MeBr uses imported timber and wood packing materials. Since ethanedinitrile (EDN) was patented by CSIRO in Australia, BOC and Dongbu have tried to develop and commercialize EDN as a timber fumigant. This is updated information on the developmental status of EDN, which included the biological efficacy to target pests and the penetrating aspect to target commodity in the semi-field and various field trials. Based on current results, EDN could replace MeBr for using timber fumigation and would play an important role in the ozone layer protection.
Future Trends in Multisensor Integration and Fusion
Ren C. Luo,Michael G. Kay,W. Gary Lee 대한전자공학회 1992 대한전자공학회 학술대회 Vol.1992 No.10
The need for intelligent systems that can operate in an unstructured, dynamic environment has created a growing demand for the use of multiple, distributed sensors. While most research in multisensor fusion has revolved around applications in object recognition-including military applications for automatic target recognition-developments in microsensor technology are encouraging more research in affordable, highly-redundant sensor networks. Three trends that are described at length are the increasing use of microsensors, the techniques that are used in the handling of partial or uncertain data, and the application of neural network techniques for sensor fusion.
Evaluation of Ni Film Interfacial Energy Release Rate on Titanium and Stainless Steel Substrates
Ren, F. Z.,Zhao, W. Z.,Zhou, G. S.,Ju, X. H.,Zheng, M. 대한금속학회 2002 METALS AND MATERIALS International Vol.8 No.2
An expression including the effect of residual stress on the interfacial energy release rate is proposed for peeling experiments according to the energy-balance argument. The influence of residual stress on the external work is also contained in the expression. Two numerical methods are employed to evaluate the values of the work expenditure G_db, which is the actual energy dissipated during bending of the peel arm near the peel front. The peeling method is employed to test the interfacial energy release rates, G, for Ni films on Titanium and stainless steel substrates. The results indicate that the value of G for Ni films on stainless steel substrate is about 5.47-6.03 N/m, while 5.23-6.71 N/m for Ni films on titanium substrate; the interfacial energy release rates, G, do not depend on the residual stress in film, film thickness nor peel angle. The effect of residual stress in film on peel strength P/h is also discussed.
High-Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates
S.Kim,B.S.Bang,F.Ren,J.d’Entremont,W.Blumenfeld,T.Cordock,S.J.Pearton 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.3
CO₂ laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 um.min -1 were ohtained for pulse energies of 7.5-30 mJ over diameters of 50-500 um with a Q-switched pulse width of -30 nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 f1I11/min) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/ AIN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate suhsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.<br/>