http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Yukiharu Uraoka,Atsushi Tomyo,Eiji Takahashi,Hiroshi Yano,Kazunori Ichikawa,Kiyoshi Ogata,Prakaipetch Punchaipetch,Takashi Fuyuki,Tomoaki Hatayama,Tsukasa Hayashi 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.2I
We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO2 at a low temperature of 430 C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 × 1011 cm.2, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO2 fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.
Yukihary Uraoka,Koji Yamasaki,Masahiro Ochi,Ichiro Yamashita,Yuta Sugawara 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.3
We proposed the fabrication method for high quality polycrystalline silicon thin films by using the Ni core of ferritin with a diameter of 7 nm. Amorphous silicon thin films with Ni cores of ferritin were crystallized by using a pulsed rapid thermal annealing (PRTA) method to short the crystallization time. Lateral growth with increasing pulse numbers was confirmed. In order to analyze the crystallinity of the film, we performed electron backscatter diffraction pattern (EBSD)and Raman analysis. A poly-Si thin film with an average crystal grain size of 5.4 µm was obtained for a low-density Ni core in less than a minute. The crystallinity of the poly-Si with a Ni core fabricated by using PRTA was almost the same as that of poly-Si with a Ni core that required 24h to fabricate. This method is promising for a low-cost fabrication of high-performance thin film transistors.
Hot Carrier Effect in Low-Temperature Poly-Si TFTs with Sputtered Gate SiO2 Films
Yukiharu Uraoka,Hiroshi Yano,Makoto Miyashita,Tadashi Serikawa,Takashi Fuyuki,Tomoaki Hatayama,Yuta Sugawara 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.4
We investigated the reliability of low-temperature poly-Si thin film transistor (TFT) by using Si films and gate oxides fabricated by using RF sputtering method. To evaluate the immunity against the hot carrier effect, we imposed DC and dynamic stress on the sputtered TFT. We found that reliability was higher than it was a conventional TFT. The sputtered TFT showed very little degradation. Observation by emission microscope was performed to analyze their strong immunity. In a conventional TFT, emission was observed only at the drain edge. However, in sputtered TFT, emission was observed not only at the drain edge but also at the source edge. We proposed a model explaining the emission in a sputtered TFT. To prove this model, we examined the emission in a SOI TFT. A similar emission mode supports our model. Sputtered TFTs are very promising for next generation.?
Evaluation Technique for Reliability in Low-Temperature poly-Si
Y. Uraoka,H. Yano,T. Fuyuki,T. Hatayama 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Analysis of the degradation in n-ch TFT under dynamic stress by using pico-second timeresolved emission microscopy was performed. We have successfully detected an emission at the pulse fall edge. Emission intensity increased with decreasing pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependence, we proposed model considering electron traps in poly-Si. Further, we analyzed thermal degradation in low temperature poly-Si thin film transistors by using infrared thermal imaging microscopy. Non uniform distribution was observed in the saturation region along the gate length. The increase of temperature was remarkable at large gate width, therefore, large voltage shift was observed. A universal relationship was obtained, independent of crystallinity of poly-Si. This curve suggests that we should take the degradation of gate oxide such as electron traps into account.
Frankenstein Ziv,Naohiro Uraoka,Umut Aypar,Ruth Aryeequaye,Mamta Rao,Meera Hameed,Yanming Zhang,Yukako Yagi 한국현미경학회 2021 Applied microscopy Vol.51 No.1
Fluorescence in situ hybridization (FISH) is a technique to visualize specific DNA/RNA sequences within the cell nuclei and provide the presence, location and structural integrity of genes on chromosomes. A confocal Whole Slide Imaging (WSI) scanner technology has superior depth resolution compared to wide-field fluorescence imaging. Confocal WSI has the ability to perform serial optical sections with specimen imaging, which is critical for 3D tissue reconstruction for volumetric spatial analysis. The standard clinical manual scoring for FISH is labor-intensive, time-consuming and subjective. Application of multi-gene FISH analysis alongside 3D imaging, significantly increase the level of complexity required for an accurate 3D analysis. Therefore, the purpose of this study is to establish automated 3D FISH scoring for z-stack images from confocal WSI scanner. The algorithm and the application we developed, SHIMARIS PAFQ, successfully employs 3D calculations for clear individual cell nuclei segmentation, gene signals detection and distribution of break-apart probes signal patterns, including standard break-apart, and variant patterns due to truncation, and deletion, etc. The analysis was accurate and precise when compared with ground truth clinical manual counting and scoring reported in ten lymphoma and solid tumors cases. The algorithm and the application we developed, SHIMARIS PAFQ, is objective and more efficient than the conventional procedure. It enables the automated counting of more nuclei, precisely detecting additional abnormal signal variations in nuclei patterns and analyzes gigabyte multi-layer stacking imaging data of tissue samples from patients. Currently, we are developing a deep learning algorithm for automated tumor area detection to be integrated with SHIMARIS PAFQ.
Araki, Shinji,Ishikawa, Yasuaki,Wang, Xudongfang,Uenuma, Mutsunori,Cho, Donghwi,Jeon, Seokwoo,Uraoka, Yukiharu Springer US 2017 NANOSCALE RESEARCH LETTERS Vol.12 No.1
<P>Fabrication methods for a 3D periodic nanostructure with excellent and unique properties for various applications, such as photonic and phononic crystals, have attracted considerable interest. Templating processes using colloidal crystals have been proposed to create nanoshell-based 3D structures over a large area with ease. However, there are technical limitations in structural design, resulting in difficulties for structural flexibility. Here, we demonstrate a combination of proximity field nanopatterning and infiltration processes using solution-derived ZnO for a nanoshell-based 3D periodic structure with high structural flexibility and controllability. A unique process of infiltration of a solution-derived material into a polymeric template prepared by a proximity field nanopatterning process achieves the fabrication of a pre-formed layer that works as a protective layer for the template and framework for the inverse structure. Subsequently, this process shows the controllability of nanoshell thickness and significant improvement in the structure height shrinkage factor (16%) compared to those of a previous non-vacuum infiltration method (34%). The proposed method offers high controllability and flexibility in the design of structural sizes, leading to further development toward nanoshell-based 3D structures for various applications including energy devices and sensors.</P><P><B>Electronic supplementary material</B></P><P>The online version of this article (doi:10.1186/s11671-017-2186-6) contains supplementary material, which is available to authorized users.</P>
Kei Matsumoto,Shinwa Tanaka,Takashi Toyonaga,Nobuaki Ikezawa,Mari Nishio,Masanao Uraoka,Tomoatsu Yoshihara,Hiroya Sakaguchi,Hirofumi Abe,Tetsuya Yoshizaki,Madoka Takao,Toshitatsu Takao,Yoshinori Morit 대한소화기내시경학회 2022 Clinical Endoscopy Vol.55 No.1
Background/Aims: The anastomotic site after distal gastrectomy is the area most affected by duodenogastric reflux. Differentreconstruction methods may affect the lesion characteristics and treatment outcomes of remnant gastric cancers at the anastomoticsite. We retrospectively investigated the clinicopathologic and endoscopic submucosal dissection outcomes of remnant gastriccancers at the anastomotic site. Methods: We recruited 34 consecutive patients who underwent endoscopic submucosal dissection for remnant gastric cancer at theanastomotic site after distal gastrectomy. Clinicopathology and treatment outcomes were compared between the Billroth II and non-Billroth II groups. Results: The tumor size in the Billroth II group was significantly larger than that in the non-Billroth II group (22 vs. 19 mm;p=0.048). More severe gastritis was detected endoscopically in the Billroth II group (2 vs. 1.33; p=0.0075). Moreover, operation timewas longer (238 vs. 121 min; p=0.004) and the frequency of bleeding episodes was higher (7.5 vs. 3.1; p=0.014) in the Billroth IIgroup. Conclusions: Compared to remnant gastric cancers in non-Billroth II patients, those in the Billroth II group had larger lesions with abackground of severe remnant gastritis. Endoscopic submucosal dissection for remnant gastric cancers in Billroth II patients involvedlonger operative times and more frequent bleeding episodes than that in patients without Billroth II.
Crystallization by Green-laser Annealing for Three-dimensional Device Application
Yumi Kawamura,Koji Yamasaki,Takehiko Yamashita,Yuta Sugawara,Yukiharu Uraoka,Mutsumi Kimura 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.5
We report the crystallization of multilayer polycrystalline Si (poly-Si) thin films by green laser annealing with potential applications to three-dimensional devices. We investigated single-, doubleand triple-layer poly-Si thin films crystallized by GLA. The crystallinity of the green-laser-annealed (GLA) poly-Si films was improved by employing a multilayer structure; larger crystal grains were obtained at a lower power than the case of a single layer. We applied the GLA multilayer poly-Si thin films to the fabrication of thin film transistors (TFTs) and thin-film photodiodes. Through a comparison of their performance, we demonstrated the superiority of multilayer crystallization.