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Model-Based Design and Control of Distributed DNA-Based Systems by Petri Nets
Rizki Mardian,Kosuke Sekiyama 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2016 NANO Vol.11 No.1
Coordination is an important aspect in developing distributed systems. While in silicon-based agents, i.e., mechanical robotics, designing individual-level behavior that may emerge into one global function is a typical approach to such systems, in DNA-based agents, programming of each individual's behavior still remains a challenge, as they are based on chemical reactions. These reactions occur immediately after all reactants have been mixed into a solution, which introduces challenges in logical control. In this work, we report a design strategy for coordinated eventdriven DNA-based systems by using a Petri Nets model. First, computational primitives based on DNA strand displacement reaction are introduced. Second, their molecular implementation is abstracted by Petri Nets for high-level design. Third, as our main contribution, we propose the model of interacting multi-agent systems based on DNA-only reactions. We verify our design via in silico simulation and show initial experiments of Petri Nets operators. From the obtained results, we argue that our design strategy is feasible for coordinating interaction of distributed DNA-based systems.
Shogo Maeda,Shinsaku Kawabata,Itsuki Nagase,Ali Baratov,Masaki Ishiguro,Toi Nezu,Takahiro Igarashi,Kishi Sekiyama,Suguru Terai,Keito Shinohara,Melvin John F. Empizo,Nobuhiko Sarukura,Masaaki Kuzuhara 대한전자공학회 2024 Journal of semiconductor technology and science Vol.24 No.1
We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al2O3/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device.
X-ray Absorption and Photoemission Spectroscopy Study of Nd½A½Mn₁-yCryO₃ (A=Ca, Sr)
J.-S. Kang,J. H. Kim,S. W. Han,K. H. Kim,E. J. Choi,A. Sekiyama,S. Kasai,S. Suga,T. Kimura 한국자기학회 2003 Journal of Magnetics Vol.8 No.4
Valence states and electronic structures of Cr-doped Nd½A½MnO₃ (NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn e_g PES spectra near E_F. The spectral intensity at E_F is higher for Cr-doped Nd½Sr½MnO₃ (NSMO) than for Cr-doped Nd½Ca½MnO₃ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of Cr₂O₃, indicating that Cr ions in Cr-doped NAMO are in the trivalent Cr³+ states (t³_(2g)). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ~1.3 eV below EF and having no emission near E_F.
H. Fujiwara,Y. Nakatani,H. Aratani,Y. Kanai-Nakata,K. Yamagami,S. Hamamoto,T. Kiss,A. Sekiyama,A. Tanaka,T. Ebihara,Y. Saitoh 한국물리학회 2023 새물리 Vol.73 No.12
We have performed the soft x-ray absorption spectroscopy (XAS) on the heavy fermion superconductor CeNi₂Ge₂ to examine the local 4f electronic structures. The XAS spectra are qualitatively explained by the ionic calculation, indicating the localized character of the 4f states, while the sizable cf-hybridization effects are also observed in the XAS spectra and those magnetic circular dichroism. In addition, the temperature dependence of linear dichroism (LD) in the XAS spectra indicates that the ground state symmetry is Γ<SUB>7</SUB>, and the excited states with Γ<SUB>6</SUB> symmetry is above 390 K.
Nozue Goro,Fujiwara Hidenori,Hamamoto Satoru,Kiss Takayuki,Tsutsumi Miwa,Oura Masaki,Ishikawa Tetsuya,Motouri Azusa,Suzuki Shintaro,Tamura Ryuji,Sekiyama Akira 한국물리학회 2023 새물리 Vol.73 No.12
We have performed Ce M4,5-edge X-ray absorption (XAS) and Ce 3d-4f resonance photoemission (RPES) spectroscopies on quasicrystal approximant Au59.2Ga25.7Ce15.1. The 3d94f1 final state originating from the itinerant 4f electronic states is negligible in the Ce M4,5-edge XAS. The Ce 3d-4f RPES spectrum shows the relatively large the spectral weight of the 4f0 final state to that of the 4f1 final state, reflecting the weak hybridization between the localized 4f orbitals and the conduction bands. The localized 4f electronic states in Au59.2Ga25.7Ce15.1 are revealed by both spectroscopies.