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Investigation of ramped voltage stress to screen defective magnetic tunnel junctions
Choi, Chulmin,Sukegawa, Hiroaki,Mitani, Seiji,Song, Yunheub IOP 2018 Semiconductor science and technology Vol.33 No.1
<P>A ramped voltage stress (RVS) method to screen defective magnetic tunnel junctions (MTJs) is investigated in order to improve screen accuracy and shorten test time. Approximately 1500 MTJs with 1.25 nm thick tunnel barriers were fabricated for this evaluation, and normal MTJs show a 189% tunnel magnetoresistance ratio, a 365 Ω <I>μ</I>m<SUP>2</SUP> resistance-area product, and a 1.8 V breakdown voltage, which is enough for applying reliable screen tests. We successfully classified MTJs as normal MTJs having good characteristics or defective MTJs having insufficient endurance and showing resistance degradation after only short-term cycling. Using the RVS screen test with low ramp speed, it is demonstrated that remarkable screening performance and little dependence on temperature are obtained for short test time.</P>
TDDB modeling depending on interfacial conditions in magnetic tunnel junctions
Choi, Chul-Min,Sukegawa, Hiroaki,Mitani, Seiji,Song, Yun-Heub IOP 2017 Semiconductor science and technology Vol.32 No.10
<P>We investigated time-dependent dielectric breakdown (TDDB) modeling for MgO dielectrics with/without Mg insertion of MgO-based magnetic tunnel junctions (MTJs). The number of permanent trap sites at the no-Mg insertion interface was much larger than that at the Mg-inserted interface as determined by interval voltage stress (IVS) tests. The interfacial conditions related to trap sites at MgO dielectrics give rise to the different TDDB modeling. Here, we confirmed that the TDDB curves obtained from the constant voltage stress (CVS) tests for the Mg inserted interface case were well fitted by the power-law voltage V model, while the case of no-Mg inserted interface showed a good correlation to the 1/E model. The difference in the TDDB models related to interfacial conditions was understood based on theoretical and experimental results. Finally, we concluded that it is necessary to select an appropriate reliability model depending upon the presence or absence of the trap sites at dielectric interfaces.</P>
이정민,길규현,이개훈,최철민,송윤흡,Hiroaki Sukegawa,Seiji Mitani 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.8
The reliability of a magnetic tunnel junction (MTJ) based on a Co2FeAl (CFA) full-Heusler alloywith a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer underthe MgO was investigated in view of resistance drift by using various voltage stress tests. Wecompared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrapphenomenon during the interval stress test for samples with and without a Mg insertion layer. TheMTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test anda reduced trap/detrap phenomenon for the interval stress test compared to the sample without aMg insertion layer. This is understood to be caused by the improved crystallinity at the bottomof the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trapsite during the stress test. As a result, the interface condition of the MgO layer is very importantfor the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgOinterface is expected to be an effective method for enhancing the reliability of a MTJ.
Lee, Jung Min,Choi, Chul Min,Sukegawa, Hiroaki,Lee, Jeong Yong,Mitani, Seiji,Song, Yun-Heub American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.1
<P>We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible.</P>
Design of MgAl₂O₄ Spinel-Oxide-Based Tunnel Barriers for Advanced Spintronics Devices
Kenji Nawa,Keisuke Masuda,Shinto Ichikawa,Hiroaki Sukegawa,Tsuyoshi Suzuki,Katsuyuki Nakada,Seiji Mitani,Yoshio Miura 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.2
Tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) is one of the central properties to develop high-performance spintronics devices. MgO(001) with bcc-Fe or CoFe electrodes has been mostly studied as a tunnel barrier of MTJs for the last decades because of its giant TMR ratio originating from the spin-filtering effect of Δ₁-symmetric evanescent states (s, pz, d3z²-r² orbitals), as predicted in 2001. However, the TMR ratio of MgO-MTJs reduces significantly by bias voltage applications, indicating a limitation of the output voltage of the MTJ. Recent experiments show that the use of a (001)-oriented spinel-type oxide, MgAl₂O₄, as a tunnel barrier improves the robustness of the TMR ratio under bias applications, but a theoretical TMR limit in Fe/MgAl₂O₄/Fe(001) MTJs is very small compared to the MgO-MTJs. This is because the in-plane lattice periodicity of Fe electrode is half of that of MgAl₂O₄ and a band-folding effect is induced in the two-dimensional Brillouin zone of the in-plane wave vector in the Fe electrode. This effect provides additional conductive states at the Δ line in MgAl₂O₄-MTJ, contributing to the reduction of the TMR ratio. In this talk, we propose a combined trilayer tunnel barrier, MgO/MgAl₂O₄/MgO, to overcome the above issue of the small TMR limit of MgAl₂O₄-MTJs on the basis of the first-principles calculations. We performed ballistic-conductance calculations in an Fe/MgO(n)/MgAl₂O₄/MgO(n)/Fe(001) MTJ using the non-equilibrium Green’s functions method to clarify the TMR ratio under bias voltage application. Here, number of MgO layers (n-ML) is changed as n = 1, 2, 3. In the case of n = 1, a large TMR ratio of 1184% is obtained at a zero-bias voltage and this large value is almost maintained up to V = 1.2 V (see blue in Fig. 1), leading to a large voltage output. In contrast, a single barrier MgAl₂O₄ shows only a small TMR ratio (~125%), which is constant below V = 1.6 V (see orange in Fig. 1). These results indicate that both the models have a similar tendency in bias voltage dependence of TMR, except for the magnitude of a TMR ratio. Moreover, we clarified that the presence of an MgO interlayer between Fe and MgAl₂O₄ plays an important role in retaining (blocking) the Δ1 evanescent state for majority (minority) spin. The former leads to the robustness of the TMR ratio against bias voltage as observed in single MgAl₂O₄ MTJs, while the latter does to the large TMR ratio as in single MgO MTJs. 〈그림 본문참조〉