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낮은 임피던스를 이용한 STT-MRAM을 위한 오프셋 제거 비트라인 감지 증폭기
길규현(Gyuhyun Kil),박용식(Yongsik Park),송윤흡(Yunheup Song) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
In this paper, to improve a sensitivity at low power for STT-MRAM(Spin Transfer Torque Magneto-resistive Random Access Memory), we propose a novel offset cancellation bit line sense amplifier using low impedance by self-biased current mirror. The experiments were done in Hspice simulator. The result of sense amplifier obtained the response time 1ns and cell current less than 10uA.
이정민,길규현,이개훈,최철민,송윤흡,Hiroaki Sukegawa,Seiji Mitani 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.8
The reliability of a magnetic tunnel junction (MTJ) based on a Co2FeAl (CFA) full-Heusler alloywith a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer underthe MgO was investigated in view of resistance drift by using various voltage stress tests. Wecompared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrapphenomenon during the interval stress test for samples with and without a Mg insertion layer. TheMTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test anda reduced trap/detrap phenomenon for the interval stress test compared to the sample without aMg insertion layer. This is understood to be caused by the improved crystallinity at the bottomof the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trapsite during the stress test. As a result, the interface condition of the MgO layer is very importantfor the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgOinterface is expected to be an effective method for enhancing the reliability of a MTJ.