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Self-doped Carboxylated Polyaniline: Effect of Hydrogen Bonding on the Doping of Polymers
Kim, Seong-Cheol,Whitten, James,Kumar, Jayant,Bruno, Ferdinando F.,Samuelson, Lynne A. The Polymer Society of Korea 2009 Macromolecular Research Vol.17 No.9
This study examined the unique self-doping behavior of carboxylated polyaniline (PCA). The self-doped PCA was synthesized using an environmentally benign enzymatic polymerization method with cationic surfactants. XPS showed that HCl-doped PCA contained approximately 34% of protonated amines but self-doped PCA contained 9.6% of the doped form of nitrogen at pH 4. FTIR and elemental analysis showed that although the PCA was doped with the proton of strong acids at low pH via the protonation of amines, the self-doping mechanism of PCA at pH > 4 was mainly due to hydrogen bonding between the carboxylic acid group and amine group.
CRYSTAL STRUCTURE OF BRANCHED EPITAXIAL III–V NANOTREES
L. REINE WALLENBERG,LISA S. KARLSSON,MAGNUS W. LARSSON,JAN-OLLE MALM,KIMBERLY A. DICK,KNUT DEPPERT,WERNER SEIFERT,LARS SAMUELSON 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2006 NANO Vol.1 No.2
In this review we discuss the morphology and crystal structure of branched epitaxial III–V semiconductor structures, so called nanotrees, based on our own work with GaP, InAs and GaP/InP. These structures are formed by epitaxial growth in a step-wise procedure where each level can be individually controlled in terms of diameter, length and composition. Poly-typism is commonly observed for III–Vs with zinc blende, wurtzite or combinations thereof as the resulting crystal structure. Here we review GaP as an example of zinc blende and InAs of wurtzite type of growth in terms of nanotrees with two to three levels of growth. Included are also previously unpublished results on the growth of GaP/InP nanotrees to demonstrate effects of heteroepitaxial growth with substantial mismatch. For these structures a topotaxial growth behavior was observed with InP wires crawling along or spiraling around the GaP nanowires acting as a free-standing substrates.