우리나라 성인의 치과의료이용 미수진 관련 요인

심형순 ( Hyungsoon Shim ),김송숙 ( Songsook Kim ),김지현 ( Jihyun Kim ) 한국치위생학회(구 한국치위생교육학회) 2015 한국치위생학회지 Vol.15 No.5

Objectives: The objective of the study was to investigate the related factors of non-utilization of dental care among Korean adults. Methods: Korean National Health and Nutrition Survey 2012 was carried out in South Korea. A total of 5,589 adults were interviewed and examined. A multinominal logistic regression model was used to estimate the odds ratio with 95% confidence intervals for the non-utilization of dental care. Results: The non-utilization of dental care was shown to have a badly perceived oral health status, less toothbrushing before sleeping(OR=1.18: 95% CI=1.00-1.39), periodontitis symptoms (OR=1.82: 95% CI=1.50-2.22), toothache experience (OR=2.03: 95% CI=1.75-2.34), TMJ symptom experience (OR=3.31: 95% CI=2.74-3.99), speaking problem (OR=1.87: 95% CI=1.75-2.34) and a partial dentures needs (OR=2.49: 95% CI=1.93-3.19). Conclusions: The non-utilization of dental care tended to have badly perceived oral health status, less toothbrushing before sleeping, periodontitis, toothache experience, TMJ symptom experience, speaking problem, and partial dentures needs.

Double-Gate MOSFET을 이용한 공핍형 NEMFET의 특성 분석 및 최적화

김지현(Jihyun Kim),정나래(Narae Jeong),김유진(Yujin Kim),신형순(Hyungsoon Shin) 大韓電子工學會 2009 電子工學會論文誌-SD (Semiconductor and devices) Vol.46 No.12

Double-Gate MOSFET 구조를 사용한 Nano-Electro-Mechanical MOSFET (NEMFET)는 게이트 길이가 짧아지면서 나타나는 단채널 현상을 효과적으로 제어하는 새로운 구조의 차세대 소자이다. 특히 공핍형 Double-gate NEMFET(Dep-DGNEMFET)은 차단 상태에서 얇은 산화막을 가지므로 subthreshold 전류가 효과적으로 제어된다. 이러한 Dep-DGNEMFET 특성에 대한 해석적 수식을 유도하고 소자 구조가 변화하는 경우의 특성 변화를 분석하였다. 또한 ITRS(International Technology Roadmap for Semiconductors) 전류 기준값을 만족시키기 위하여 Dep-DGNEMFET 소자 구조를 최적화 하였다. Nano-Electro-Mechanical MOSFET (NEMFET) using Double-Gate MOSFET (DGMOS) structure can efficiently control the short channel effect. Espatially, subthreshold current of depletion-mode Double-Gate NEMFET (Dep-DGNEMFET) decreases in the off-state due to the thin equivalent-oxide thickness. Analytical t<SUB>gap</SUB> vs. V<SUB>g</SUB> equation for Dep-DGNEMFET is derived and characteristics for different device structures are analyzed. Dep-DGNEMFET structure is optimized to satisfy ITRS criteria.

건강장애학생 교육에 대한 주체별 요구분석

도재우(Jaewoo Do),김민경(Minkyeong Kim),김형순(Hyungsoon Kim),김민정(Minjeong Kim) 서원대학교 사범대학 부설 교육연구소 2024 교육발전 Vol.43 No.3

건강장애학생 수의 지속적인 증가와 맞춤형 교육지원의 필요성이 증가함에 따라 건강장애학생 교육에 대한 관심이 높아지고 있다. 이 연구는 건강장애학생 교육의 현안 해결 및 교육 변화에 대응한 건강장애학생 교육의 발전방안을 심층적・종합적으로 탐색하였다. 구체적으로 건강장애학생 교육과 관련된 주체(시・도교육청 담당자, 학교 교사, 위탁교육기관 교원, 건강장애학생, 건강장애학생 학부모)를 대상으로 관련 요구를 표적집단면접을 통해 조사하였다. 연구결과, 교육과정 및 교육내용, 교육방법 및 평가, 학생 및 교사 지원, 신규 교육정책 도입에 대한 총 10개의 요구가 확인되었으며 각 요구가 밀접하게 연계되어 있음을 확인하였다. 연구결과로 도출된 각 요구는 건강장애학생 교육을 위한 발전과제와 이를 위한 주체별 역할 정립의 필요성을 설명한다. As the number of students with health impairments continues to increase and the need for customized educational support increases, interest in education for students with health impairments is increasing. This study explored deeply and comprehensively the development tasks in education for students with health impairments to solve current issues and response to educational changes. In specific, the needs of all subjects(public officials, teachers, teachers of consigned educational institutions, students, and parents) related to education for students with health impairments were investigated through focus group interviews. As a result of the study, a total of 10 needs related to the curriculum and contents, educational methods and evaluations, student and teacher support, and the new educational policies were identified, and we found that each need was closely related. Each need derived from this research explains the development tasks for the education of students with health impairments and the necessity of establishing a role for each subjects.

결합력에 따른 고분자 전해질막 연료전지의 성능에 관한 연구

차도원(Dowon Cha),김보성(Bosung Kim),전승원(Seungwon Jeon),김형순(Hyungsoon Kim),김성우(Sungwoo Kim),김용찬(Yongchan Kim) 대한기계학회 2014 대한기계학회 춘추학술대회 Vol.2014 No.11

A new weight redistribution technique for electron-electron scattering in the MC simulation

Kim, Jongchol,Shin, Hyungsoon,Lee, Chanho,Park, Y.J.,Min, Hong Shick IEEE 2004 IEEE transactions on electron devices Vol.51 No.9

A novel technique for the weight redistribution after the electron-electron scattering between weighted electrons in the weighted ensemble Monte Carlo simulation is proposed. By generating an additional electron after each electron-electron collision the conservation of energy, momentum and charge is guaranteed, which has not been possible in the previously reported methods. The proposed technique has been successfully applied to an ideal gas simulation. Based on the new model, the tail carrier behavior due to the electron-electron scattering in the n<SUP>+</SUP>-doped silicon is studied.

Vegetation structure and distribution characteristics of Symplocos prunifolia, a rare evergreen broad-leaved tree in Korea

Kim, Yangji,Song, Kukman,Yim, Eunyoung,Seo, Yeonok,Choi, Hyungsoon,Choi, Byoungki The Ecological Society of Korea 2020 Journal of Ecology and Environment Vol.44 No.4

Background: In Korea, Symplocos prunifolia Siebold. & Zucc. is only found on Jeju Island. Conservation of the species is difficult because little is known about its distribution and natural habitat. The lack of research and survey data on the characteristics of native vegetation and distribution of this species means that there is insufficient information to guide the management and conservation of this species and related vegetation. Therefore, this study aims to identify the distribution and vegetation associated with S. prunifolia. Results: As a result of field investigations, it was confirmed that the native S. prunifolia communities were distributed in 4 areas located on the southern side of Mt. Halla and within the evergreen broad-leaved forest zones. Furthermore, these evergreen broad-leaved forest zones are themselves located in the warm temperate zone which are distributed along the valley sides at elevations between 318 and 461 m. S. prunifolia was only found on the south side of Mt. Halla, and mainly on south-facing slopes; however, small communities were found to be growing on northwest-facing slopes. It has been confirmed that S. prunifolia trees are rare but an important constituent species in the evergreen broad-leaved forest of Jeju. The mean importance percentage of S. prunifolia community was 48.84 for Castanopsis sieboldii, 17.79 for Quercus acuta, and 12.12 for Pinus thunbergii; S. prunifolia was the ninth most important species (2.6). Conclusions: S. prunifolia can be found growing along the natural streams of Jeju, where there is little anthropogenic influence and where the streams have caused soil disturbance through natural processes of erosion and deposition of sediments. Currently, the native area of S. prunifolia is about 3300 ㎡, which contains a confirmed population of 180 individual plants. As a result of these low population sizes, it places it in the category of an extremely endangered plant in Korea. In some native sites, the canopy of evergreen broad-leaved forest formed, but the frequency and coverage of species were not high. Negative factors that contributed to the low distribution of this species were factors such as lacking in shade tolerance, low fruiting rates, small native areas, and special habitats as well as requiring adequate stream disturbance. Presently, due to changes in climate, it is unclear whether this species will see an increase in its population and habitat area or whether it will remain as an endangered species within Korea. What is clear, however, is that the preservation of the present native habitats and population is extremely important if the population is to be maintained and expanded. It is also meaningful in terms of the stable conservation of biodiversity in Korea. Therefore, based on the results of this study, it is judged that a systematic evaluation for the preservation and conservation of the habitat and vegetation management method of S. prunifolia should be conducted.

Advanced Circuit-Level Model of Magnetic Tunnel Junction-based Spin-Torque Oscillator with Perpendicular Anisotropy Field

Kim, Miryeon,Lim, Hyein,Ahn, Sora,Lee, Seungjun,Shin, Hyungsoon The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.6

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems

Kim, Bokyung,Jo, Sumin,Sun, Wookyung,Shin, Hyungsoon American Scientific Publishers 2019 Journal of Nanoscience and Nanotechnology Vol.19 No.10

The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

Kim, Miryeon,Sun, Wookyung,Kang, Jongseuk,Shin, Hyungsoon Institute of Physics 2017 Semiconductor science and technology Vol.32 No.8

<P>The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (<I>C</I> <SUB>gs</SUB>) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (<I>C</I> <SUB>g-LS</SUB>). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical <I>C</I> <SUB>g-LS</SUB> model for SPICE simulation is proposed and verified.</P>

A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Jihyun Kim,Wookyung Sun,Seunghye Park,Hyein Lim,Hyungsoon Shin 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.4

In this paper, we present a compact model of gate-voltage-dependent quantum effects in shortchannel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson’"s equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths (Lg) and radii (R). Schrodinger’"s equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.