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Kang, Joo-Won,Cho, Won-Ju Elsevier 2019 Solid-state electronics Vol.152 No.-
<P><B>Abstract</B></P> <P>Sensing properties of various high-k sensing membrane, such as SnO<SUB>2</SUB>, HfO<SUB>2</SUB>, ZrO<SUB>2</SUB>, and Ta<SUB>2</SUB>O<SUB>5</SUB>, in dual gate extended-gate field-effect transistor (EGFET) were investigated. By adapting the dual-gate structure, high sensitivity exceeding the conventional Nernstian limit on sensitivity (59.15 mV/pH at 25 °C) was realized due to capacitive coupling effect. As a results, it was confirmed that dual-gate EGFET with Ta<SUB>2</SUB>O<SUB>5</SUB> sensing membrane which has high permittivity shows the highest sensitivity of 478.0 mV/pH as well as excellent hysteresis voltage and drift rate characteristics.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We evaluated the effect of extended-gate filed-effect transistor (EGFET) sensors. </LI> <LI> We used a dual gate structure transducer to overcome the theoretical Nernstian limit. </LI> <LI> We found that the Ta<SUB>2</SUB>O<SUB>5</SUB> sensing membrane has the highest sensitivity of 478.0 mV/pH. </LI> </UL> </P>
Kang, Min-Soo,Cho, Won-Ju Elsevier 2018 The Journal of physics and chemistry of solids Vol.123 No.-
<P><B>Abstract</B></P> <P>In this study, we fabricated ReRAM devices with the structure Ti/AlO<SUB> <I>x</I> </SUB>/Pt by applying solution-processed AlO<SUB> <I>x</I> </SUB> film as the switching layer. This enabled us to analyze the effect of the MWI power on the resistive switching performance of ReRAM. The AlO<SUB> <I>x</I> </SUB> resistive switching layer deposited by the solution-process was subjected to PDA treatment with microwave power ranging from 600 W to 3000 W, and the resistive switching performance was compared with as-dep and CTA-processed ReRAMs. All AlO<SUB> <I>x</I> </SUB>-based ReRAM devices exhibited bipolar resistive switching characteristics, and MWI-treated devices had larger memory windows than as-dep and CTA-treated devices. These solution-processed AlO<SUB> <I>x</I> </SUB> ReRAMs were found to exhibit Ohmic conduction in the low-voltage range of both the LRS and HRS. The high-voltage range of HRS shows the Poole-Frenkel conduction mechanism. In addition, compared with the as-dep device, the PDA-treated devices exhibited stable endurance characteristics and uniform resistance distribution in 1000 cycles of the switching operation, and showed reliable retention characteristics for 10,000 s at both room temperature and high temperature. XPS measurements were performed to analyze the relationship between the resistive switching performance and chemical nature of the AlO<SUB> <I>x</I> </SUB> switching layer by varying the microwave power and heat treatment method.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Resistive switching of resistive random access memory (ReRAM) devices was studied. </LI> <LI> Microwave irradiation (MWI) power of ReRAM solution-treated AlO<SUB>x</SUB> switching layers. </LI> <LI> Effect of MWI ranging from 600 W to 3000 W evaluated. </LI> <LI> Memory characteristics improved as MWI power increased. </LI> <LI> X-ray photoelectron spectroscopy showed that oxygen increased stoichiometrically. </LI> </UL> </P>
Pcmtd1 gene-deficient mice shown enhanced glucose tolerance
Ju Sung Kang,Eun Kyoung Kim,Yong Sub Byun,Hae Rim Kim,Ju Young Lee,Yu Rim Kim,Min Young Lee,Sang Mi Cho,Hoyoung Ghang,Ki Hoon Lee,Won Kee Yoon,Young Suk Won,Hyoung Chin Kim,Beom Jun Lee,Ki Hoan Nam 한국실험동물학회 2015 한국실험동물학회 학술발표대회 논문집 Vol.2015 No.8
Kang, Nae-Won,Kim, Min-Hwan,Sohn, Seo-Yeon,Kim, Ki-Taek,Park, Ju-Hwan,Lee, Sun-Young,Lee, Jae-Young,Kim, Dae-Duk Elsevier 2018 Biomaterials Vol.182 No.-
<P><B>Abstract</B></P> <P>Cellulose nanofiber (CNF) is an attractive biomaterial given its film-forming properties, excellent mechanical properties and biocompatibility. Herein, CNF film was prepared as a topical drug delivery system by hybridizing curcumin (Cur)-loaded nanostructured lipid carriers (NLCs). NLCs with a mean diameter of ≈500 nm were fabricated by using a solvent diffusion method. The lipid composition of the NLCs was optimized based on the efficiency of Cur delivery to the artificial skin and mechanical strength of the developed films, where a composition containing shea butter and Capmul MCM EP exhibited the highest values of 233.2 ± 96.6 μg/cm<SUP>2</SUP>/mg and 4.86 ± 0.14 MPa, respectively. The Cur-loaded lipid-hybridized CNF (lipid@CNF) films with a smooth rather than particle-embedded surface were obtained by vacuum filtration of the NLCs and CNF mixture, which were confirmed by TEM, SEM, AFM, XPS, and FTIR analyses. The Cur-loaded lipid@CNF films exhibited more than 2.0-fold increases in Cur deposition to the epidermis of imiquimod (IMQ)-induced psoriatic mouse compared with the films without lipids, which potentially resulted from the amorphous state of Cur observed in the DSC and PXRD analyses and the permeation-enhancing effect of lipids. The <I>in vivo</I> anti-psoriatic efficacy test revealed that the Cur-loaded lipid@CNF films ameliorated the psoriatic skin symptoms in IMQ-induced mice, reducing the pro-inflammatory cytokine levels in the skin almost comparable to a commercially available topical corticosteroid cream. These results could be attributed to the enhanced Cur deposition along with the skin hydration effect of the films. These findings suggest that the developed CNF films can be used as a promising topical drug delivery system for psoriasis therapy.</P>
Kang, Min-Soo,Cho, Won-Ju ELSEVIER 2018 Current Applied Physics Vol.18 No.9
<P>In this study, we fabricated high-performance a-IGZO TFTs by forming Al2O3 and a-IGZO thin films for gate insulator and active channel layer, respectively, using a sol-gel process. MWI for low thermal budget process was used to condensate Al2O3 and a-IGZO films, which was compared with the CTA. It is found that the MWI is superior process to the conventional method in terms of precursor and solvent decomposition and has proven to be more effective for eliminating residual organic contaminants. In addition, the MWI-treated Al2O3 and IGZO films have smoother surfaces, higher visible light transmittance, lower carbon contamination and impurities than the CTA-treated films. We have demonstrated that a-IGZO TFTs with sol-gel solution-processed Al2O3 gate insulator and a-IGZO channel layer can achieve a field effect mobility of 69.2 cm(2)/V.s, a subthreshold swing of 86.2 mV/decade and a large on/off current ratio of 1.48 x 10(8), by the MWI process even at temperatures below 200 degrees C. In addition, the MWI-treated a-IGZO TFTs have excellent resistance to electron trapping and good stability to positive and negative gate-bias stress. Therefore, the sol-gel processed a-IGZO TFTs with Al2O3 gate oxide and the MWI treatment with a low thermal budget are promising for emerging transparent flat panel displays applications.</P>