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Al6061 소재의 소구경 고속측면밀링특성에 관한 연구
박휘근(Hwi-Keun Park),이상민(Sang-Min Lee),이충석(Choong-Seok Lee),채승수(Seung-Soo Chae),이원석(Won-Seok Lee),최윤서(Yun-Seo Choi),조현택(Hyun-Taek Jo),백영종(Young-Jong Baek),이종찬(Jong-Chan Lee) 한국기계가공학회 2012 한국기계가공학회지 Vol.11 No.3
In this paper, the high speed milling characteristics of Al6061 was studied. A gantry type milling & tapping center was developed for this study. The cutting force and the resulting surface roughness were measured at various cutting conditions. The experimental results indicate that the surface roughness is relative to the cutting conditions.
비정질 Ge<SUB>1 − x</SUB>Mn<SUB>x</SUB> 박막의 자기수송특성에 미치는 열처리 효과
김동휘(Dong Hwi Kim),이병철(Byeong Cheol Lee),찬티난안(Tran Thi Lan Anh),임영언(Young Eon Ihm),김도진(Dojin Kim),김효진(Hyojin Kim),유상수(Sang Soo Yu),백귀종(Kui Jong Baek),김창수(Chang Soo Kim) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.4
Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to 700 ℃ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at 500 ℃ for 3 minutes and they were crystallized when annealing temperature increase to 600 ℃. Temperature dependence of resistivity measurement implied that as-grown and annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The 700 ℃-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ~8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.
Performance investigation of an independent dedicated outdoor air system for energy-plus houses
Kim, Min-Hwi,Kim, Jong-Kyu,Lee, Kyoung-Ho,Baek, Nam-Choon,Park, Dong-Yong,Jeong, Jae-Weon Elsevier 2019 Applied thermal engineering Vol.146 No.-
<P><B>Abstract</B></P> <P>This study proposes an independent dedicated outdoor air system (IDOAS) for energy-plus houses under the humid subtropical climate located in Daejeon, South Korea. The proposed IDOAS can be used as a stand-alone ventilation and dehumidification system. In order to investigate the energy efficiency of the IDOAS, four different types of systems are simulated including the conventional dehumidifier (i.e., Case 1) and conventional dedicated outdoor air system (DOAS) (i.e., Case 2). The first IDOAS (i.e., Case 3) is designed such that the evaporator of the heat pump is located at the supply air (SA) side and the two separated condensers are located on the SA and exhaust air sides, respectively. The second IDOAS (i.e., Case 4) has a direct evaporative cooler located on the exhaust air side to improve the heat extraction rate. It is shown that the conventional DOAS and IDOAS-2 yielded the highest energy efficient system.</P> <P><B>Highlights</B></P> <P> <UL> <LI> An independent dedicated outdoor air system was proposed for an energy-plus house. </LI> <LI> The energy saving potential of the dedicated outdoor air system was investigated. </LI> <LI> The proposed system saved 37% of operating energy compared to conventional systems. </LI> <LI> The proposed system generated 38% more surplus energy via the conventional systems. </LI> </UL> </P>
Polyphosphide Precursor for Low-Temperature Solution-Processed Fibrous Phosphorus Thin Films
Ban, Hyeong Woo,Oh, Jong Gyu,Jo, Seungki,Jeong, Hyewon,Gu, Da Hwi,Baek, Seongheon,Lee, Song Yeul,Park, Yong Il,Jang, Jaeyoung,Son, Jae Sung American Chemical Society 2019 Chemistry of materials Vol.31 No.15
<P>Crystalline red phosphorus has very recently emerged as a stable and cost-effective semiconductor material. However, despite its potentiality in electronics and optoelectronics, the widespread application of this material is still hampered by the limited synthetic route of the ampoule-based chemical vapor deposition that critically requires mineralizing agents. To address this issue, we report the chemical synthesis of soluble polyphosphide precursors that serve as inks for the solution-processed fabrication of crystalline fibrous phosphorus thin films. The purified polyphosphide precursor formed crystalline fibrous phosphorus via thermal annealing at a temperature as low as 250 °C without any mineralizing agents. This anionic polyphosphide functioned as a surface-capping ligand for nanoparticles including metals, semiconductors, and magnets. Therefore, the study investigates the possibility of solution-processed fibrous phosphorus thin films as active channel layers in field-effect transistors as well as photodetectors and demonstrates their initial performances on the charge-transport and photoresponsive characteristics of these devices. The effect of semiconducting PbS nanoparticles embedded in the fibrous phosphorus thin films on device performance was also studied. The synthesized polyphosphide precursor offers a vast opportunity for the facile preparation of crystalline red phosphorus and chemical design of nanoparticles.</P> [FIG OMISSION]</BR>