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Lee, Janghyun,Park, Eun-Byeol,Min, Jiyoun,Sung, Si-Eun,Jang, Yejin,Shin, Jin Soo,Chun, Dongmin,Kim, Ki-Hun,Hwang, Jihyun,Lee, Mi-Kyung,Go, Yun Young,Kwon, Dohyeong,Kim, Meehyein,Kang, Suk-Jo,Choi, Byo Oxford University Press 2018 Nucleic acids research Vol.46 No.4
<P><B>Abstract</B></P><P>Retinoic acid-inducible gene I (RIG-I) recognizes double-stranded viral RNAs (dsRNAs) containing two or three 5′ phosphates. A few reports of 5′-PPP-independent RIG-I agonists have emerged, but little is known about the molecular principles underlying their recognition. We recently found that the bent duplex RNA from the influenza A panhandle promoter activates RIG-I even in the absence of a 5′-triphosphate moiety. Here, we report that non-canonical synthetic RNA oligonucleotides containing G-U wobble base pairs that form a bent helix can exert RIG-I-mediated antiviral and anti-tumor effects in a sequence- and site-dependent manner. We present synthetic RNAs that have been systematically modified to enhance their efficacy and we outline the basic principles for engineering RIG-I agonists applicable to immunotherapy.</P>
Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets
Chung, Kunook,Oh, Hongseok,Jo, Janghyun,Lee, Keundong,Kim, Miyoung,Yi, Gyu-Chul Nature Publishing Group 2017 NPG Asia Materials Vol.9 No.7
<P>Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, the achievement of high-density crystal growths was a critical growth step because the sp(2)-bonded h-BN layers are known to be free of dangling bonds. Unlike GaN layers grown on a typical heterogeneous sapphire substrate, the morphological and microstructural results strongly suggest a high-density growth feature that is driven by the atomic cliffs inherent in the CVD-grown h-BN layers. More importantly, the GaN layers grown on CVD-grown h-BN exhibited a flat and continuous surface morphology with well-aligned crystal orientations both along the c-axis and in-plane, indicating the characteristics of GaN heteroepitaxy on h-BN.</P>
The suggestion of development direction for the 4th Industrial Revolution and Korea Logistics 4.0
( Choi Eun-jae ),( Jo Inbin ),( Choi Su-ha ),( Sim Seungo ),( Jang Haegun ),( Noh Dasom ),( Kim Janghyun ) 한국물류학회 2018 The Pan-Pacific Journal of Supply Chain Management Vol.2 No.1
This study analyzes the advanced cases to solve the problems such as weakening competitiveness if the response to the 4th Industrial Revolution of Korea slows down and introduces them into the Korean business canvas model. And we would like to suggest the direction that Korea should change in the era of the 4th Industrial Revolution. In order to achieve the purpose of the study, the business canvas model of the advanced cases in which the logistics advancement technology of the 4th Industrial Revolution era was introduced, and the blocks which should be reflected in Korea among the 9 blocks of the business model canvas were examined. After creating the AS-IS business model canvas of Korea based on the advanced case model, we introduced the business model canvas block element of the advanced case to the TO-BE business model canvas of Korea and presented the necessary elements to become a competitive country. It also suggests ways to introduce the technologies of advanced cases in detail and shows that Korea's logistics competitiveness can be increased in the future.