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Unipolar Resistance Switching Characteristics in a Thick ZnO/Cu/ZnO Multilayer Structure
Tran Le,Hoang Cao Son Tran,Van Hieu Le,Tuan Tran,Cao Vinh Tran,Thanh Tan Vo,Mau Chien Dang,김상섭,이재찬,Bach Thang Phan 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.7
The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.
Control of morphology and Orientation of Electrochemically Grown ZnO Nanorods
Tran Hoang Cao Son,Le Khac Top,Nguyen Thi Dong Tri,Ha Thuc Chi Nhan,Lam Quang Vinh,Bach Thang Phan,김상섭,Le Van Hieu 대한금속·재료학회 2014 METALS AND MATERIALS International Vol.20 No.2
We report the direct electrochemical deposition of ZnO nanorods on an indium tin oxide substrate. Themorphology and orientation of the grown ZnO nanorods were investigated as functions of the currentdensity. It is likely that the concentrations of OH- and Zn2+ ions, which could be controlled by varying thecurrent density, determine the shape and alignment of the ZnO nanorods. The nanorods were tilted, hexagonal,and prismatic at a low current density (0.1 mA/cm2) and vertically aligned and obelisk-shaped at highcurrent densities (greater than 0.6 mA/cm2). By using the low and high current densities sequentially in atwo-step growth process, vertically aligned, hexagonal, and prismatic ZnO nanorods could be grownsuccessfully. The underlying mechanism responsible for the growth of the ZnO nanorods is also discussed.