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Unipolar Resistance Switching Characteristics in a Thick ZnO/Cu/ZnO Multilayer Structure
Tran Le,Hoang Cao Son Tran,Van Hieu Le,Tuan Tran,Cao Vinh Tran,Thanh Tan Vo,Mau Chien Dang,김상섭,이재찬,Bach Thang Phan 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.7
The resistance switching mechanism and the electrical conduction of thick Cu/ZnO/Cu/ZnO/Cu structures were investigated for various ZnO thicknesses (40, 80, 160, and 320 nm) when the thickness of the middle Cu layer was 2 nm. The ZnO films had a microstructure with columnar grains normal to the substrate. The switching voltages (VSET and VRESET) varied with the thickness of the ZnO layer. A symmetric electrode structure exhibited a unipolar resistance switching. The electrical transport of both high-resistance state (HRS) and low-resistance state (LRS) was Ohmic conduction, and the resistance switching mechanism was driven by the formation and the rupture of Cu conducting paths.
Relaxor Behaviors in xBaTiO₃–(1-x)CoFe₂O₄ Materials
Cao Thi My Dung,Nhu Hoa Tran Thi,Kieu Hanh Thi Ta,Vinh Cao Tran,Bao Thu Le Nguyen,Van Hieu Le,Phuong Anh Do,Anh Tuan Dang,Heongkyu Ju,Bach Thang Phan 한국자기학회 2015 Journal of Magnetics Vol.20 No.4
Dielectric properties of xBaTiO₃–(1-x)CoFe₂O₄ composite materials have been investigated. Dielectric properties of BaTiO₃, CoFe₂O₄ and 0.5BaTiO₃–0.5CoFe₂O₄ samples show frequency dependence, which is classified as relaxor behavior with different relaxing degree. The relaxor behaviors were described using the modified Curier-Weiss and Vogel–Fulcher laws. Among three above samples, the BaTiO₃ sample has highest relaxing degree. Photoluminescence spectral indicated defects, which might in turn control relaxing degree.
Control of morphology and Orientation of Electrochemically Grown ZnO Nanorods
Tran Hoang Cao Son,Le Khac Top,Nguyen Thi Dong Tri,Ha Thuc Chi Nhan,Lam Quang Vinh,Bach Thang Phan,김상섭,Le Van Hieu 대한금속·재료학회 2014 METALS AND MATERIALS International Vol.20 No.2
We report the direct electrochemical deposition of ZnO nanorods on an indium tin oxide substrate. Themorphology and orientation of the grown ZnO nanorods were investigated as functions of the currentdensity. It is likely that the concentrations of OH- and Zn2+ ions, which could be controlled by varying thecurrent density, determine the shape and alignment of the ZnO nanorods. The nanorods were tilted, hexagonal,and prismatic at a low current density (0.1 mA/cm2) and vertically aligned and obelisk-shaped at highcurrent densities (greater than 0.6 mA/cm2). By using the low and high current densities sequentially in atwo-step growth process, vertically aligned, hexagonal, and prismatic ZnO nanorods could be grownsuccessfully. The underlying mechanism responsible for the growth of the ZnO nanorods is also discussed.
Tracking the establishment of local endemic populations of an emergent enteric pathogen
Holt, Kathryn E.,Thieu Nga, Tran Vu,Thanh, Duy Pham,Vinh, Ha,Kim, Dong Wook,Vu Tra, My Phan,Campbell, James I.,Hoang, Nguyen Van Minh,Vinh, Nguyen Thanh,Minh, Pham Van,Thuy, Cao Thu,Nga, Tran Thi Thu National Academy of Sciences 2013 PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF Vol.110 No.43
<P><I>Shigella sonnei</I> is a human-adapted pathogen that is emerging globally as the dominant agent of bacterial dysentery. To investigate local establishment, we sequenced the genomes of 263 Vietnamese <I>S. sonnei</I> isolated over 15 y. Our data show that <I>S. sonnei</I> was introduced into Vietnam in the 1980s and has undergone localized clonal expansion, punctuated by genomic fixation events through periodic selective sweeps. We uncover geographical spread, spatially restricted frontier populations, and convergent evolution through local gene pool sampling. This work provides a unique, high-resolution insight into the microevolution of a pioneering human pathogen during its establishment in a new host population.</P>
Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure
Trung Do Nguyen,Kim Ngoc Pham,Vinh Cao Tran,Duy Anh TuanNguyen,Bach Thang Phan 한국전기전자학회 2013 전기전자학회논문지 Vol.17 No.3
We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.
Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure
Nguyen, Trung Do,Pham, Kim Ngoc,Tran, Vinh Cao,TuanNguyen, Duy Anh,Phan, Bach Thang Institute of Korean Electrical and Electronics Eng 2013 전기전자학회논문지 Vol.17 No.3
We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.