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PBK drives PARP inhibitor resistance through the TRIM37/NFκB axis in ovarian cancer
Ma Hanlin,Qi Gonghua,Han Fang,Peng Jiali,Yuan Cunzhong,Kong Beihua 생화학분자생물학회 2022 Experimental and molecular medicine Vol.54 No.-
Resistance to PARP inhibitors (PARPi) remains a therapeutic challenge in ovarian cancer patients. PDZ-binding kinase (PBK) participates in the chemoresistance of many malignancies. However, the role of PBK in PARPi resistance of ovarian cancer is obscure. In the current study, we demonstrated that overexpression of PBK contributed to olaparib resistance in ovarian cancer cells. Knockdown of PBK sensitized olaparib-resistant SKOV3 cells to olaparib. Inhibition of PBK using a specific inhibitor enhanced the therapeutic efficiency of olaparib. Mechanically, PBK directly interacted with TRIM37 to promote its phosphorylation and nuclear translocation. which subsequently activates the NFκB pathway. Additionally, PBK enhanced olaparib resistance of ovarian cancer by regulating the NFκB/TRIM37 axis in vitro and in vivo. In conclusion, PBK confers ovarian cancer resistance to PARPi through activating the TRIM37-mediated NFκB pathway, and targeted inhibition of PBK provided the new therapy to improve PARPi treatment outcomes for ovarian cancer patients.
Infrared Semiconducting Transition-Metal Dichalcogenide Lasing with a Silicon Nanocavity
Hongji Li,Hanlin Fang,Jianling Xiao,Juntao Li,Yue Wang 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.3
The remaining challenge for silicon photonics is creating a light-emitter on chip. Recently, a special group of two-dimensional materials, semiconducting transition-metal dichalcogenides, have been developed. These materials demonstrate unique electronic properties and excellent optoelectronic performance, opening up new possibilities to finally overcome this challenge. In this letter, we report a novel nano-scale silicon laser source, which was achieved by combining a far-field optimized silicon photonic crystal cavity and a two-dimensional gain material, tri-layer molybdenum ditelluride. When an optical continuous-wave pump was employed, the maximum lasing output power obtained was at a wavelength of 1080 nm. Such output power shows that this novel source has great potential for use in on-chip optical communication.