http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
The catalytic activities of nanoclusters dispersed on apatite
J.Ichihara,K.Iteya,H.Kawaguchi,Y.Sasaki,H.Nakayama,S.Yamaguchi 한양대학교 세라믹연구소 2003 Journal of Ceramic Processing Research Vol.4 No.1
Cetylpyridinium phosphomolybdates (Q3[PMo12O40], Q=CetylPy) dispersed on apatite catalyzed H2O2-oxidations of organic compounds under solid-phase conditions without organic solvent. FT-IR and 31P solid-state NMR spectroscopic studies showed the formation of peroxo species in our solid-phase system, which was different from the peroxo type of CetylPy3{PO4[Mo(O)(O2)2]4} (PMo4) known as an active species in the conventional liquid-biphase system. The catalytic activities of them were compared in the solid-phase system.
Study on α-cluster levels in non-4n nuclei using low-energy RI beams
Yamaguchi, H,Kahl, D,Hayakawa, S,Sakaguchi, Y,Abe, K,Nakao, T,Suhara, T,Iwasa, N,Kim, A,Kim, D H,Cha, S M,Kwag, M S,Lee, J H,Lee, E J,Chae, K Y,Wakabayashi, Y,Imai, N,Kitamura, N,Lee, P,Moon, J Y,Lee, IOP Publishing 2017 Journal of physics. Conference series Vol.863 No.-
Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate
H. Kim,H. S. Ahn,K. H. Kim,M. Yamaguchi,양민,N. Sawaki,S. N. Yi,T. Narita,Y. Honda 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Optical characteristics of the AlGaN/GaN/AlGaN heterostructure waveguide grown on Si substrate are estimated by photoluminescence (PL) measurement. The sample was selectively grown as triangular striped structures by metal organic vapor phase epitaxy (MOVPE). We have studied the dependence of PL characteristics of the waveguide structures on the variation of input power position. Two main peaks related to different facets in the waveguide structures were observed.
Experimental investigation of a linear-chain structure in the nucleus <sup>14</sup>C
Yamaguchi, H.,Kahl, D.,Hayakawa, S.,Sakaguchi, Y.,Abe, K.,Nakao, T.,Suhara, T.,Iwasa, N.,Kim, A.,Kim, D.H.,Cha, S.M.,Kwag, M.S.,Lee, J.H.,Lee, E.J.,Chae, K.Y.,Wakabayashi, Y.,Imai, N.,Kitamura, N.,Lee North-Holland Pub. Co 2017 Physics letters. Section B Vol.766 No.-
It is a well-known fact that a cluster of nucleons can be formed in the interior of an atomic nucleus, and such clusters may occupy molecular-like orbitals, showing characteristics similar to normal molecules consisting of atoms. Chemical molecules having a linear alignment are commonly seen in nature, such as carbon dioxide. A similar linear alignment of the nuclear clusters, referred to as linear-chain cluster state (LCCS), has been studied since the 1950s, however, up to now there is no clear experimental evidence demonstrating the existence of such a state. Recently, it was proposed that an excess of neutrons may offer just such a stabilizing mechanism, revitalizing interest in the nuclear LCCS, specifically with predictions for their emergence in neutron-rich carbon isotopes. Here we present the experimental observation of α-cluster states in the radioactive <SUP>14</SUP>C nucleus. Using the Be10+α resonant scattering method with a radioactive beam, we observed a series of levels which completely agree with theoretically predicted levels having an explicit linear-chain cluster configuration. We regard this as the first strong indication of the linear-chain clustered nucleus.
Metalorganic-Hydride Vapor Phase Epitaxy Growth of GaN/AlN on Si Substrates
H. J. LEE,M. YANG,H. S. AHN,H. S. KIM,J. H. CHANG,J. Y. YI,K. H. KIM,M. YAMAGUCHI,N. SAWAKI,S. C. LEE,S. N. YI,S. W. KIM,Y. HONDA 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
High-quality GaN lm with AlN buer layer was successfully grown by using our newly designed metalorganic-hydride vapor-phase epitaxy (MO-HVPE) system. We performed the growth of AlN buer layer on Si (111) substrates by the use of TMA and NH3 at 935 C. GaN lms were grown on AlN/Si (111) substrates by using metallic Ga, NH3 and HCl as source materials at 1050 C. The morphologies of the GaN and AlN buer layers were characterized by scanning electron microscopy (SEM). For the optical characterization of the GaN/AlN/Si, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy were carried out at room temperature.