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오늘 본 자료
Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE
M. Mizushima,M. Yamaguchi,N. Sawaki,T. Kato,Y. Honda 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Infrared reflectance spectroscopy was applied to the GaN/AlGaN triangular stripes grown on a Si(111) substrate by selective area metalorganic vapor phase epitaxy. Because of the triangular shape of the GaN, which worked itself as a prism, we could detect the local vibration modes of Si-N, N-H$_2$, Si-H, and Si-O bonds near the GaN/Si interface with high sensitivity.
N Suzumura,M. Yamaguchi,N. Sawaki,Y. Nishimoto 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
The intersubband relaxation processes of electrons in GaAs/AlGaAs mesoscopic disks were investigated by femtosecond reflectance spectroscopy. It was found that the relaxation time in a mesoscopic disk is on the order of sub-picosecond and depends on the shape of the disk. Under the lowest excitation intensity where the relaxation time is independent of the excitation intensity, the LO phonon emission rate is lower than that expected in a bulk GaAs. Moreover the time constant depended on the shape of the disk. A possible origin of the suppression of LO phonon emission rate is discussed from the point of the modification of the scattering cross section in a disk of mesoscopic size.
Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate
경화 김,H. Kim,H. S. Ahn,M. Yamaguchi,M. Yang,N. Sawaki,N. Kameshiro,S. N. Yi,Y. Honda 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Photoluminescence (PL) spectra of self-doped GaN were investigated at 77 K. The AlGaN/GaN heterostructure was selectively grown by metal-organic vapor phase epitaxy (MOVPE) on a (111) etched facet of 7$^\circ$ off Si (001) substrate. A peak was observed at 78.1 meV below the band edge peak at 77 K but disappeared at 300 K. The peak depends strongly on varying input power intensity. This peak might originate from the self-doped (SD) layer formed by diffusion of impurities from SiO$_2$ and/or Si substrate.
Carrier Lifetime Reduction in a p-i GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
K. Mizutani,H. S. Ahn,M. Yamaguchi,N. Sawaki,Y. Nishimoto 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
The lifetime of photo-excited carriers in a p-i GaAs/AlGaAs asymmetric triple quantum well structure was investigated by the femto-second pump-probe method. The transmission change of the probe pulse shows the decay of the carriers excited by the pump pulse in the ATQW. The carrier relaxation time was as short as 80 ps in the weak pump beam intensity region. The fast decay is attributed to the hole tunneling in the valence band.
Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate
H. Kim,H. S. Ahn,K. H. Kim,M. Yamaguchi,양민,N. Sawaki,S. N. Yi,T. Narita,Y. Honda 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Optical characteristics of the AlGaN/GaN/AlGaN heterostructure waveguide grown on Si substrate are estimated by photoluminescence (PL) measurement. The sample was selectively grown as triangular striped structures by metal organic vapor phase epitaxy (MOVPE). We have studied the dependence of PL characteristics of the waveguide structures on the variation of input power position. Two main peaks related to different facets in the waveguide structures were observed.
Metalorganic-Hydride Vapor Phase Epitaxy Growth of GaN/AlN on Si Substrates
H. J. LEE,M. YANG,H. S. AHN,H. S. KIM,J. H. CHANG,J. Y. YI,K. H. KIM,M. YAMAGUCHI,N. SAWAKI,S. C. LEE,S. N. YI,S. W. KIM,Y. HONDA 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
High-quality GaN lm with AlN buer layer was successfully grown by using our newly designed metalorganic-hydride vapor-phase epitaxy (MO-HVPE) system. We performed the growth of AlN buer layer on Si (111) substrates by the use of TMA and NH3 at 935 C. GaN lms were grown on AlN/Si (111) substrates by using metallic Ga, NH3 and HCl as source materials at 1050 C. The morphologies of the GaN and AlN buer layers were characterized by scanning electron microscopy (SEM). For the optical characterization of the GaN/AlN/Si, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy were carried out at room temperature.
$8^{\circ}$-off (100) Si 기판위의 반극성을 가지는 (1-101) InGaN/GaN 다중양자우물 구조의 MOVPE 성장
Han, Y.H.,Jean, H.S.,Hong, S.H.,Kim, E.J.,Lee, A.R.,Kim, K.H.,Ahn, H.S.,Yang, M.,Tanikawa, T.,Honda, Y.,Yamaguchi, M.,Sawaki, N. 한국결정성장학회 2009 한국결정성장학회지 Vol.19 No.1
본 연구에서는 metal organic vapor phase epitaxy(MOVPF) 방법으로 $8^{\circ}$-off (100) Si 기판 위에 분극이 완화된(1-101) GaN를 성장한 후 광소자로서의 가능성을 확인하고자 (1-101) GaN 위에 InGaN/GaN MQW 구조를 제작하였으며 암모니아 유량, TMI 유랑 그리고 성장 온도 등 다양한 성장 조건에 따른 구조적, 광학적인 특성을 scanning electron microscopy(SEM)와 cathodoluminescence(CL)을 통하여 관찰하였다. (1-101) GaN 성장시 암모니아 유량이 적을수록 관통전위가 현저히 줄어드는 것을 확인하였다. (1-101) GaN stripe 위에 성장 시킨 InGaN/GaN MQW 구조를 이용하여 성장조건에 따라서 391.5nm부터 541.2nm에 이르는 넓은 영역의 범위에서 발광 스펙트럼을 조절할 수 있음을 확인하였다. In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.