http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
A 24 ㎓ High Gain, High Efficient Stagger-Tuned CMOS Power Amplifier
Tahesin Samira Delwar(델웨 타헤신 사미라),Abrar Siddique(아브라르 시디크),Manas Ranjan Biswal(비스왈 마나스 란잔),Prangyadarsini Behera(프랑기다르시니 베헤라),Yeji Choi(최예지),Habibulloyev F. A. Ugli(하비불로예브 파흐리딘 압두하림 우그리),Bo-Yeong Park 대한전자공학회 2022 대한전자공학회 학술대회 Vol.2022 No.6
Chowdhury, Md Delwar Hossain,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang Institute of Electrical and Electronics Engineers 2015 IEEE transactions on electron devices Vol. No.
<P>We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO<SUB>2</SUB>) and bilayer (SiO<SUB>2</SUB>/SiN<SUB>x</SUB>) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts (AVON), the size of which increased with storing time. The negative A VON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO<SUB>2</SUB> passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO<SUB>2</SUB> passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO<SUB>2</SUB> interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).</P>
Billah, Mohammad Masum,Delwar Hossain Chowdhury, Md,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang IEEE 2016 IEEE electron device letters Vol.37 No.6
<P>We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). With respect to the transfer characteristics of a-IGZO TFTs, we show a larger negative threshold voltage shift (ΔVTH) with increasing a-IGZO active layer thickness. This trend is confirmed by TCAD simulation, where the initial transfer curve is plotted under varying a-IGZO thickness keeping a constant density of states. Under varying a-IGZO thickness, TCAD simulation results confirm TFTs under DG driving shows significantly less ΔVTH shift under NBIS compared with that of single gate (SG) driving TFTs. Under 10 K seconds of NBIS, TCAD simulation results show the increase in donor-like states (NGD) by 5.25 × 10<SUP>17</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP> and acceptor-like states (NGA) by 7.5 × 10<SUP>16</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP>.</P>
Characterization and Modeling of a-IGZO TFTs
Migliorato, Piero,Chowdhury, Md Delwar Hossain,Jae Gwang Um,Manju Seok,Martivenga, Mallory,Jin Jang IEEE 2015 Journal of display technology Vol.11 No.6
<P>In this paper, we present a systematic approach to the characterization and modeling of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs), where the key parameters are determined from the analysis of both I- V and C- V characteristics, in a step-by-step fashion, without complex interdependences that may affect the accuracy of the results. Flat band voltage VFB and carrier concentration nFB are extracted by a method we have previously developed, validated here by applying it to simulated data. Next, the density of deep gap states is extracted, followed by the determination, by a new method, of the shallow donor concentration. The tail states parameters are determined last, by matching the calculated nFB to the experimental one. Simulations are then performed without any adjustable parameters. The approach is applied to the study of device to device variations, indicating that the material is strongly compensated. As for the analysis of Negative Bias under Illumination Stress (NBIS), this work confirms that the effect is due to creation of a double donor, with a shallow level close to the conduction band (positive correlation energy). Oxygen vacancies are the likely candidates. These defects are not detected in unstressed devices, where the characteristics can be accurately simulated by incorporating donors with a single shallow level.</P>