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Mechanistic Details of Atomic Layer Deposition (ALD) Processes
Mingde Xu,Francisco Zaera,Byung-Chang Kang,Hugo Tiznado,Ilkeun Lee,Menno Bouman 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.3
Several examples are provided where the reaction mechanisms of atomic layer deposition (ALD) processes have been characterized by a combination of surface-sensitive techniques. In the first, a proposal is advanced for the layer-by-layer growth of metal films using metal carbonyl precursors and hydrogen as a carbon monoxide displacement agent. For copper film growth, the use of amidinate complexes has being characterized. A third example comprises the deposition of TiN films from TiCl4 and ammonia. Finally, the use of Zr(EtMe)4 as a precursor for zirconium nitride ALD film growth on high surface-area silica is briefly explored.