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MAGNETIC PROPERTIES OF Cr-DOPED AlN FILMS
Van-Son Dang,Young-Yeal Song,Byung Sub Kang,Quang-Hoa Nguyen,Seong-Cho Yu 한국자기학회 2006 한국자기학회 학술연구발표회 논문개요집 Vol.- No.-
Single phase AlCrN thin films were obtained. The lattice parameter of the a-axis increased while the lattice parameter of the c-axis decreased with an increase of Cr content. Within the doping limit, the saturated magnetization increased with increasing of Cr content. All the samples shows strongly ferromagnetic properties. The ferromagnetic properties is very strong compared to reported value.
MAGNETIC AND ELECTRIC PROPERTIES OF CR-DOPED WIDE BAND GAP ALN SEMICONDUCTOR THIN FILMS
Van-Son Dang,Young-Yeal Song,Seong-Cho Yu 한국자기학회 2006 한국자기학회 학술연구발표회 논문개요집 Vol.- No.-
AlN: Cr films (with different Cr chips from 0 to 4) were prepared by magnetron DC reactive sputtering. X-ray diffraction (XRD) pattern indicates that the films are single phase with hexagonal AlN structure. The saturated magnetization MS increases when the Cr chips increases from 1 to 3 chips. Optical absorption gap decreases from 6.18 to 4.74 with increasing Cr content. R(T) curve shows AlN:Cr as semiconductor behavior.
Van Duy, Nguyen,Jung, Sungwook,Nga, Nguyen Thanh,Son, Dang Ngoc,Cho, Jaehyun,Lee, Sunhwa,Lee, Wonbaek,Yi, Junsin Elsevier 2010 Materials science and engineering B. Advanced Func Vol.175 No.2
<P><B>Abstract</B></P><P>Beside silicon nitride, silicon rich SiO<SUB><I>x</I></SUB> is a good charge storage material for the charge trap type of nonvolatile memory due to the high density of the charge traps. In this study, the charge storage ability of various amorphous SiO<SUB><I>x</I></SUB> materials has been investigated. By controlling the ratio of N<SUB>2</SUB>O/SiH<SUB>4</SUB> gases from a 1:6 to a 2:1 input gas flow rate, the deposited SiO<SUB><I>x</I></SUB> bandgap changed from 2.3 to 3.9eV. The charge storage properties of the SiO<SUB><I>x</I></SUB> system were studied on metal–insulator–semiconductor structures with an insulator stack of SiO<SUB>2</SUB>/SiO<SUB><I>x</I></SUB>/SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> on an n-type silicon wafer. In this structure, the SiO<SUB>2</SUB> was used for the blocking layer and the SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> was used for the tunneling layer. By analyzing the FTIR and the photoluminescence spectra, it is shown that the richest silicon material incorporates numerous non-bridging oxygen hole-center (NBOHC) defect sources and a rich silicon phase in the base material. These defects, as well as the amorphous silicon clusters that exist in the SiO<SUB><I>x</I></SUB> layer, enhanced the charge storage capacity of the device compared to the oxygen rich SiO<SUB><I>x</I></SUB> cases. The retention property was optimized by surveying the tunneling thickness of the 2.3, 2.6, 2.9, and 3.2nm SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> layers.</P>
Van Duy, Nguyen,Jung, Sungwook,Kim, Kwangryul,Son, Dang Ngoc,Nga, Nguyen Thanh,Cho, Jaehyun,Choi, Byoungdeog,Yi, Junsin Institute of Physics [etc.] 2010 Journal of physics. D, applied physics Vol.43 No.7
<P>Silicon-rich SiO<SUB><I>x</I></SUB> material is a good charge storage candidate for memory applications that promise a large memory window and low operation voltage. Nonvolatile memory (NVM) devices fabricated on excimer laser-annealed polysilicon using SiO<SUB>2</SUB>/SiO<SUB><I>x</I></SUB>/SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> (OOxOn) structure are investigated with SiO<SUB>2</SUB> blocking thicknesses changing from 15 to 20 to 30 nm. The Si-rich SiO<SUB><I>x</I></SUB> material exposed numerous non-bridging oxygen hole-centre defect sources and a rich silicon phase in the base material. These defects, as well as amorphous silicon clusters existing in the SiO<SUB><I>x</I></SUB> layer, enhance the charge storage capacity of the device. Retention properties were ensured by 3.2 nm SiO<SUB><I>x</I></SUB>N<SUB><I>y</I></SUB> tunnelling layer growth via N<SUB>2</SUB>O plasma-assisted oxynitridation. NVM characteristics showed a retention exceeding 85% of the threshold voltage shift after 10<SUP>4</SUP> s and greater than 70% after 10 years. Depending on the blocking thickness of 15, 20 or 30 nm, operating voltages varied from ±9 to ±13 V at a programming/erasing duration of only 1 ms. These excellent operating properties of the OOxOn structure make it a potential competitor among the new generation of memory structures on glass.</P>
Numerical Study of Free Surface Effect on Supercavitating Flows
Son-Tung Dang,Cong-Tu Ha,Van-Tu Nguyen,Warn-Gyu Park(박원규),Dong-Hyun Kim(김동현) 대한기계학회 2015 대한기계학회 춘추학술대회 Vol.2015 No.11
In this paper, we focus on applying the volume of fluid (VOF) method coupled with an interface reconstruction technique to capture the free surface between liquid and gas. The governing equation is the compressible Navier-Stokes equations based on the homogeneous mixture model. A preconditioned method is applied for enhancing efficient and accurate computations over a wide range of Mach numbers. For evaluation, the present results have been compared with experiments and other numerical results. A fairly good agreement with the experimental data and other numerical results has been obtained. Finally, the simulation of natural supercavitating flows over a plate hydrofoil was conducted to show the effect of free surface on characteristic length of supercavitation.
Son, Dang Ngoc,Van Duy, Nguyen,Jung, Sungwook,Yi, Junsin Institute of Physics 2010 Semiconductor science and technology Vol.25 No.8
<P>Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN<I><SUB>x</SUB></I> films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application.</P>