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p-Type GaN Growth from a Single GaN Precursor via Molecular Beam Epitaxy and Dopant Activation
Cunxu Gao,Chang Gyoun Kim,Chang Soo Kim,김도진,우부성,김효진,Young Eon Ihm 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.I
A study of GaN and p-GaN growths with doping of Mg, Be and Mn was undertaken using a single GaN precursor source via molecular beam epitaxy. Measurements of the changes in surface morphology and film resistivity with growth temperature and doping were carried out. Mg or Be acceptors were shown to improve the surface roughness of the films through forming of acceptor-nitrogen-hydrogen complexes. Thermal annealing for acceptor activation was performed in vacuum, Ar, and N$_2$ by using rapid thermal annealing. The environment of the activation annealing process was shown to affect the activation kinetics and the activation behaviors. A nitrogen ambient delayed the activation of the acceptors, but higher temperature promoted the activation process. The behaviors of the acceptor-nitrogen-hydrogen complexes were systematically examined through experimental set-ups and comparison with the behaviors in GaN:Mn film.
Rui Guo,Cunxu Wang,Shu Liu,Xin Guan,Wei Gao,Shuaijie Wang,Chuan Chen 보안공학연구지원센터 2016 International Journal of Grid and Distributed Comp Vol.9 No.10
With the continuous expansion of the scale of distributed power generation,multi grid connected converters often prone to oscillation problems when parallel operation.In this paper,we study the equivalent circuit of parallel connection of multi grid connected converters , system response characteristics of voltage source and in-depth analysis of the causes of the parallel oscillation of the converters.This paper analyzes converter’s parallel complex vector model by complex vector and comes to a conclusion that power grid voltage feed-forward will produce strong coupling between converter so that cause oscillation parallel converters. In view of the above problems and the flow of the converter starting or the voltage fluctuation of the grid, we design a low feed forward method, that is to make the fundamental and the main sub components of the grid voltage forward without delay and for the relative high frequency components, the filter technology is used to attenuate, so as to achieve the maximum elimination of the feed-forward coupling between the converter, to prevent the occurrence of system oscillation. In order to verify the use of this paper, the theory of the parallel converter is applied in the field of MW level wind field. The experimental results prove the correctness of the theory.
The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs
Yu, Fucheng,Gao, Cunxu,Parchinskiy, P.B.,Chandra, Sekar.P.V.,Kim, Do-Jin,Kim, Chang-Soo,Kim, Hyo-Jin,Ihm, Young-Eon Materials Research Society of Korea 2008 한국재료학회지 Vol.18 No.8
Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.