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A parametric analysis of the flutter instability for long span suspension bridges
Como, M.,Ferraro, S. Del,Grimaldi, A. Techno-Press 2005 Wind and Structures, An International Journal (WAS Vol.8 No.1
A simplified analysis able to point out the most relevant geometrical and aerodynamic parameters that can influence the flutter of long span modern bridges is the aim of the paper. With this goal, by using a continuous model of the suspension bridge and by a quasi stationary approach, a simple formula of the combined vertical/torsional flutter wind speed is given. A good agreement is obtained comparing the predictions from the proposed formula with the flutter speeds of three modern suspension or cable stayed bridges: the Great Belt East Bridge, the Akashi and Normandie bridges. The paper ends with some comments and comparisons with the well known Selberg formula.
Relic-Texts and Temples: The Shōtoku Cult, Silla and the Roots of Japanese Buddhism
Michael COMO 동국대학교 불교문화연구원 2018 International Journal of Buddhist Thought & Cultur Vol.28 No.1
This paper engages a set of issues related to recent discussions concerning interactions between texts, narratives, and materiality in the formation and development of religious movements. In contrast to the general tendency of such studies to presume a high level of background literacy, this paper asks how the transmission of the Buddhist tradition to the Japanese islands at a time when Japan was still essentially a preliterate society helped shape early Japanese understandings of Buddhist scriptures and their uses. The paper engages these issues by focusing on two important moments in the development of the Japanese Buddhist tradition. The first of these centers on the construction of the founding legend of Japanese Buddhism. This legend helped define the relationship between the Buddhist tradition and the early Japanese state and, more broadly, established a reference point for later Buddhist movements seeking to plot new doctrinal or social trajectories. The second phenomenon addressed by the paper concerns the origins for the practice of sutra burials that became widespread beginning in the first decade of the 11th century. This practice, in which religious devotees buried sutras in the earth in the hopes that they could be accessed in the Final Age of the Dharma, both reflected and helped shape early Japanese Pure Land belief.
A Verifiable Design Methodology at System-Level
Camurati, P.,Como, F.,Prinetto, P.,Bayol, C.,Soulas, B. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
Working at system level is attracting increasing interest, as it supports the exploration of several alternatives, before the hardwarelsoftware partitioning takes place. New issues must be taken into account, such as validation and verification at alt steps. This paper presents a system-level design methodology that supports verification. Starting from a description in a verification-oriented version of VHDL, art efficient BDD-based tool for Process Algebras is used to perform equivalence proofs.
M.E. Rivas-Aguilar,N. Hernandez-Como,G. Gutierrez-Heredia,A. Sánchez-Martínez,M. Mireles Ramirez,M.A. Quevedo-López 한국물리학회 2018 Current Applied Physics Vol.18 No.7
In this work, the specific contact resistance (ρc) between amorphous indium-gallium-zinc-oxide (IGZO) semiconductor and different contact electrodes was obtained from thin film transistors (TFTs). Ti/Au (10/100 nm), aluminum doped zinc oxide (AZO, 100 nm) and indium tin oxide (ITO, 100 nm) were used as source/drain electrodes to fabricate IGZO TFTs. Chemical states of the contacts/semiconductor interfaces were examined by depth profile X-ray photoelectron spectroscopy (XPS) analysis to explain the origin of the differences on specific contact resistance. The lowest ρc achieved using Ti/Au was related to the formation of a TiOx interlayer due to oxygen atoms diffusing out from the semiconductor under layer, increasing the carrier concentration of IGZO at the interface and lowering the ρc. On the contrary, no interfacial reactions were observed between IGZO and AZO or ITO source/drain. However, IGZO resistivity increased with ITO contacts likely due to oxygen vacancies filling during ITO deposition. This fact seems to be the origin of the high contact resistance between IGZO and ITO, compared to IGZO-AZO and IGZO-Ti/Au interfaces.