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Park, Hyo-Hoon,Yoo, Byueng-Su Electronics and Telecommunications Research Instit 1995 ETRI Journal Vol.17 No.1
We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.
박찬욱,이승훈,정해원,Shinmo An,El-HangLee,Byueng-Su Yoo,Jay Roh,김경헌 한국광학회 2012 Current Optics and Photonics Vol.16 No.3
We have evaluated a 1.3 μm vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from 20 °C to 60 °C up to bit-error-rate (BER) of 10-12. The DC bias current and modulation currents are only 7 mA and 6 mA,respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.
40 Gb/s optical subassembly module for a multi-channel bidirectional optical link
Sangirov, Jamshid,Joo, Gwan-Chong,Choi, Jae-Shik,Kim, Do-Hoon,Yoo, Byueng-Su,Ukaegbu, Ikechi Augustine,Nga, Nguyen T. H.,Kim, Jong-Hun,Lee, Tae-Woo,Cho, Mu Hee,Park, Hyo-Hoon The Optical Society 2014 Optics express Vol.22 No.2
10 Gbps/ch Full-Duplex Optical Link Using a Single-Fiber Channel for Signal Transmission
Nga, Nguyen T. H.,Sangirov, Jamshid,Gwan-Chong Joo,Byueng-Su Yoo,Ukaegbu, Ikechi A.,Tae-Woo Lee,Mu-Hee Cho,Hyo-Hoon Park IEEE 2014 IEEE photonics technology letters Vol.26 No.6
<P>A 10 Gbps/ch full-duplex (simultaneous bidirectional) optical link utilizing two optical subassembly (OSA) transceiver (TRx) modules and two wavelengths, 850 and 1060 nm, for sending and receiving optical signals through a single fiber channel in a fiber array is demonstrated. Each of the OSA TRx modules consists of transmitter/receiver chips, optical fibers embedded in a V-grooved silicon substrate, two 45 ° mirrors formed in fibers, and three silicon optical benches for mounting vertical-cavity surface-emitting lasers, photodiodes (PDs), and monitoring PDs. Mirror-1 in the fiber is coated with a wavelength-filtering layer to reflect transmitted light and pass through received light. Mirror-2 deflects received light to the PD. Two OSA TRx modules were applied in an end-to-end quad small form-factor pluggable optical link for 40-Gbps operation. This optical link showed good performance with clear eye-diagrams and a BER of at <;10<SUP>-12</SUP> Gbps/ch with -8-dBm input power.</P>
AlxGa₁-xAs / AlAs / GaAs계로 이루어진 비대칭 이중 양자우물 구조에서의 광 Luminescence 특성 연구
정태형(Taehyoung Zyung),강태종(Tai-Jong Kang),이종태(Seon-Kyu Han),한선규(Jong-Tai Lee),유병수(Byueng-Su Yoo),이해권(Hae-Kwon Lee),이정희(Jung-Hee Lee),이민영(Min-Yung Lee),김동호(Dong-Ho Kim),임영안(Young-Ahn Leem),우종천(Jong-Chun 한국광학회 1992 한국광학회지 Vol.3 No.3
AlxGa_(1-x)As/AlAs/GaAs계로 이루어진 비대칭 이중 양자우물 구조의 광학적 특성을 photoluminescence, photoluminescence excitation, time-resolved photoluminescence를 통하여 조사하였다. 양자장벽 AlAs의 두께에 따른 특성 변화를 조사하기 위하여 두께를 15Å, 150Å로 제작하였다. 양자장벽이 15Å인 경우 매우 빠른 전자의 관통 현상을 보여 주었으며, 이로 인해 AlxGa_(1-x)As의 여기자 재결합에 해당하는 피크가 관찰되지 않았다. AlAs 양자장벽이 150Å인 경우에는 AlxGa_(1-x)As 양자우물에서 여기자 재결합에 의한 피크가 50 ㎰ 이하로 빠른 decay 시간을 보여 주었으며 이것은 양자장벽과의 Γ-X전이에 의한 것으로 사료되었다. GaAs 양자우물에서의 luminescence decay는 두 시료 모두 1 ㎱정도 이었으나, 15Å인 경우에는 약 100 ㎰의 rise 시간이 존재하였으며 이것은 정공의 관통에 의한 시간으로 판명되었다. Luminescence properties of asymmetric double quantum well structure composed of AlxGa_(1-x)As/AlAs/GaAs have been studied by steady state and time-resolved photoluminescence and phtoluminescence excitation spectroscopy at low temperature. Two quantum well samples with different barrier thickness (15Å and 15Å) were prepared to investigate the dependence of tunneling characteristics on barrier thickness. The abscence of excitonic recombination peak from AlxGa_(1-x)As wen for the 15Å barrier sample indicates a very fast electron tunneling to GaAs well. Meanwhile, Γ-X transition between wen and barrier is supposed to be a major route for the fast decay of luminescence from AlxGa_(1-x)As wen in the 150Å barrier sample. Time-resolved photoluminescence from GaAs wen of 15Å sample shows the exsitence of the rise with 100 ps which is attributed to the hole tunneling.
Kim, Jin Joo,Kim, Kyong Hon,Lee, Min-Hee,Lee, Hyun Sik,Lee, El-Hang,Kwon, O-Kyun,Roh, Jay,Yoo, Byueng-Su IEEE 2007 Photonics Technology Letters Vol.19 No.5
<P>We report, for the first time, a successful 2.5-Gb/s transmission performance of a 1.5-mum emission monolithic vertical-cavity surface-emitting laser (VCSEL) over hybrid links composed of 25-km-long conventional single-mode fibers (SMFs) and a 2.2-km-long 50-mum core multimode fibers (MMFs). This result suggests that 1.5-mum wavelength VCSELs can be effectively used for multigigabit-per-second transmission over hybrid links interconnecting SMF-based long-distance and (or) subscriber network lines with MMF-based local-area network lines in the future ubiquitous network era</P>