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RISS 인기검색어
- 검색키워드
- 저자 : A. Chovet (검색결과 3 건)
- 무료
- 기관 내 무료
- 유료
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Low-Frequency Noise in High-k Gate Dielectric Nanoscale MOSFETs
한일기,J. I. Lee,A. Chovet,B. Szentpali,H. D. Nam,최원준 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
The results of a simulation study on low-frequency excess noise in high-k SiO2/HfO2 dual dielectric n-MOSFETs are reported. Based on the ‘Unified Model’ where tunneling to traps in oxides is the major noise generation mechanism, we show how the low-frequency noise density and the frequency power index depend on the thickness of the interfacial oxide layer. Also, a simple and useful parameter extraction method for low-frequency noise is introduced.
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Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots
이정일,남형도,최원준,유병용,송진동,홍성철,노삼규,A. Chovet 한국물리학회 2006 Current Applied Physics Vol.6 No.6
Currentvoltage and low frequency excess electrical noise characteristics of two dierentSchottky diode and n-i-n diodeGaAs structures embedded with self-assembled In(Ga)As quantum dots are reported. We nd the growth of quantum dots inducesdefects not only near the quantum dot but also extended to quite a distance toward the growth direction. In Schottky diode struc-ture, comparing with the reference sample without the quantum dot layer, the current dependence of the low frequency noise spec-tral density indicated that the noise is from the generated interface states with the density increasing towards the band tail. Also thecrystal quality of the Schottky diode including the quantum dot layer, deduced from the Hooge parameter, was slightly worse thanthat of the reference sample. For n-i-n diode structure, the currentvoltage relation was linear, and a quadratic current dependenceof the noise spectral density was observed. The Hooge parameter for the n-i-n structure was determined to be on the order of unityindicating the general degradation of the structure.
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Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots
Lee, J.I.,Nam, H.D.,Choi, W.J.,Yu, B.Y.,Song, J.D.,Hong, S.C.,Noh, S.K.,Chovet, A. Elsevier 2006 Current Applied Physics Vol.6 No.6
<P><B>Abstract</B></P><P>Current–voltage and low frequency excess electrical noise characteristics of two different—Schottky diode and n-i-n diode—GaAs structures embedded with self-assembled In(Ga)As quantum dots are reported. We find the growth of quantum dots induces defects not only near the quantum dot but also extended to quite a distance toward the growth direction. In Schottky diode structure, comparing with the reference sample without the quantum dot layer, the current dependence of the low frequency noise spectral density indicated that the noise is from the generated interface states with the density increasing towards the band tail. Also the crystal quality of the Schottky diode including the quantum dot layer, deduced from the Hooge parameter, was slightly worse than that of the reference sample. For n-i-n diode structure, the current–voltage relation was linear, and a quadratic current dependence of the noise spectral density was observed. The Hooge parameter for the n-i-n structure was determined to be on the order of unity indicating the general degradation of the structure.</P>
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