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Low-Frequency Noise in High-k Gate Dielectric Nanoscale MOSFETs
한일기,J. I. Lee,A. Chovet,B. Szentpali,H. D. Nam,최원준 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
The results of a simulation study on low-frequency excess noise in high-k SiO2/HfO2 dual dielectric n-MOSFETs are reported. Based on the ‘Unified Model’ where tunneling to traps in oxides is the major noise generation mechanism, we show how the low-frequency noise density and the frequency power index depend on the thickness of the interfacial oxide layer. Also, a simple and useful parameter extraction method for low-frequency noise is introduced.