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자동화 기술 교육을 위한 시청각 교재 개발에 관한 연구
홍봉식(Bong Sik Hong),양현수(Hyun Soo Yang),류정인(Jeong In Ryu),류창열(Chang Yol Ryu),이상정(Sang Jeong Lee),염명숙(Myung Sook Yeom) 대한공업교육학회 1989 대한공업교육학회지 Vol.14 No.1
The purpose of this study is to develop audio-visual teaching material for automation techniques education. Today video recorders are widely used in education, because they have a lot of advantages over other media. Therefore a video was selected as a instructional medium. This paper focuses on the characteristics and merits of video program as well as relations between instructional events and program format. Besides in order to develop an effective and efficient instructional material, production system was designed and implemented by systems approach and a team approach.
홍봉식(Bong Sik Hong) 대한공업교육학회 1980 대한공업교육학회지 Vol.5 No.2
Epitaxial layers of silicon have been grown on silicon substrates by hydrogen reduction of silicon tetrachloride. Growth rate on oriented <111> antimony doped substrates was 1.2μm/min and controlled gas doping was up to ~10^13 ㎝^(-3) impurity concentration in epitaxial layers.
수평 Bridgman 법에 의한 GaAs 단결정 (單結晶) 성장 및 특성
홍봉식(Bong Sik Hong),한병성(Byoung Sung Han) 대한공업교육학회 1985 대한공업교육학회지 Vol.10 No.1
The GaAs single crystal growing apparatus and growing techniques by the horizontal Bridgman method are studied. The furnace systems consist of heating system, temperature controllers, pulling system and baking furance. Pertinent growth parameters, such as precise arsenic vapour pressure, thermal gradient in the growing crystal and in the melt, and the pulling velocity for the crystal growth can be independently controlled. During the operation, thermal stability of ±0.2℃ is realized and growth velocity is 0.9㎝/h. As to be controlled the variable resistances, the optimal temperature gradient is realized. Temperatures of 618℃ and 1238℃ at As and GaAs polycrystal sities respectively in the furnace were found to be optimal for the production of single crystalline GaAs.
홍봉식(Bong Sik Hong),남궁석(Suk Namgung),양현수(Hyun Soo Yang),류정인(Jeong In Ryu),류창열(Chang Yol Ryu),이상정(Sang Jeong Lee),염명숙(Myung Sook Yeom) 대한공업교육학회 1990 대한공업교육학회지 Vol.15 No.1
CNC education in technical high schools has been faced a lot of problems such as lack of CNC machines and facilities, useful teaching materials, support for maintenance, purchase of spareparts etc. In order to solve these problems, new educational methods and educational programs should be considered. The purpose of this study are two : one is to develop the educational video program for CNC education and the other is to promote development activities of educational video programs in industrial education field. This paper focuses on the theoretical backgrounds and procedure for developing video program. In order to develop an effective and efficient educational video program, production system was designed and implemented by a system approach and a team approach.
Pt-GaAs Schottky Barrier Diode의 Computer Simulation
윤현로,홍봉식,Yoon, Hyun-Ro,Hong, Bong-Sik 대한전자공학회 1990 전자공학회논문지 Vol. No.
본 논문에서 유한차분법을 이용하여 Pt-GaAs Schottky Barrier Diode(SBD)를 일차원으로 simulation하였다. 반도체의 지배방정식인 포아송 방정식(poisson equation)과 전류연속 방정식)current continuity equation)을 이산화 시킨 다음 Newton-Raphson 방법으로 선형화시켜서 가우스 소거법으로 해가 수렴할 때까지 반복적으로 풀었다. 이 SBD의 해석에 필요한 경계조건은 열전자방출-확산이론(thermionic emission-diffusion theory)으로부터 Schottky Barrier의 경계조건을 취하였다. 에피층을 갖는 SBD를 모델링하여 인가전압에 따른 다이오드에서의 전위와 전자의 분포를 simulation 하였다. 전위에 따라 변하는 접속층을 고려하여 실험치와 잘 일치하는 결과를 얻었다. In this work, one-dimensional simulation is carried out for PT-GaAs Schottky barrier diodes with finite difference method. Shockley's semiconductor governing equations: Poisson equation and current continuity equation are discertized, and linearized by Newton-Raphson method. The linear system of equation is solved by Gaussian elimination method until convergence is achieved. The boundary condition for this equation is taken from thermionic emission-diffusion theory. Simulation is done for PT-GaAs epitaxial-layer Schottky barrier diodes. The claculated results of electron and potential distribution are shown. Simulation results show exellent agreement with experiments.
텡스텐 실리사이드 상의 얇은 SiO₂ / Si₃N₄ 막의 특성평가
구경완(Kyung Wan Koo),홍봉식(Bong Sik Hong) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
텅스텐 실리사이드를 축적전극으로 하는 얇은 N/O(SiO₂/Si₃N₄) 구조막의 특성을 다결정 실리콘의 경우와 비교 평가하였다. 누설전류 및 항복전압이 향상되었고 축적용량은 감소하였다. 용량 감소의 원인중의 하나는 텡스텐 실리사이드 상의 산화막 성장율이 다결정 실리콘 위에서 보다 빠른 것이고 둘째는 열처리에 따라 다결정 실리콘 내 도판트 불순물이 텅스텐 실리사이드를 통하여 외향확산하여 다결정 실리콘 내에 공핍층을 형성하게 되고 공핍층 용량으로 인하여 축적용량이 감소하게 된다. The characteristics of N/O(SiO₂/Si₃N₄) film on WSi₂ are compared with storage node Poly-Si. Leakage current and breakdown voltage are improved and storage capacitance is decreased. The oxidation rate of WSi₂ is more rapid than polycrystalline silicon. Thus the thick bottom oxide on the WSi₂ causes to the decrease of capacitance. The out diffusion of dopant impurity in polycrystalline silicon through the silicide leads to the formation of a depletion region in the polycrystalline silicon and the decrease of depletion capacitance. That results in the decrease of the overall storage capacitance.