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진정태(Jeong Tae Jin),차병헌(Byeong Heon Cha),이성만(Sungman Lee),장대식(Dae Sik Chang),이흥호(Heung Ho Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
This paper shows circuits and their output characteristics of a pulse power supply for pulsed laser diodes. The power supply is designed of its output voltages over than 100V, currents 100A, pulse repetition rates 100㎐, and pulse width 10㎲~500㎲.
진정태(Jeong-Tae Jin),차병헌(Byung-Heon Cha),남성모(Sung-Mo Nam),이종민(Jong-Min Lee),성세진(Se-Jin Seong) 전력전자학회 1999 전력전자학술대회 논문집 Vol.- No.-
The high repetition rate thyratron trigger pulse generator was constructed and tested. It consists of the pulse generator with 800 V,8 A, and 2μs pulse width, the negative bias power supply with DC(-)150V, and the keep-alive power supply with DC 200 V. For the purpose of fast riding time and high repetition rate operation, a MOSFET was used as a main switching device.
진정태(Jeong-Tae Jin),차병헌(Byung-Heon Cha),성세진(Se-Jin Seong) 전력전자학회 2001 전력전자학술대회 논문집 Vol.2001 No.-
An IGBT driver for serially connected pulse switching IGBTs was contructed and tested. The IGBT driver has ten output pulses with 1μ sec pulse width. Its pulse repetition-rate can adjusted from 0to20 ㎑. The output pulses was insulated from 10㎾ high voltage by a pulse transformer. Their voltage amplitude are 18V, voltage rising time 252 nsec, and voltage falling time 200 nsec when IGBT gates with 12nF input capacitance are connected.<br/> <br/>