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직접접합 실리콘/실리콘질화막//실리콘산화막/실리콘 기판쌍의 선형가열에 의한 보이드 결함 제거
정영순,송오성,김득중,주영철,Jung Youngsoon,Song Ohsung,Kim Dugjoong,Joo Youngcheol 한국재료학회 2004 한국재료학회지 Vol.14 No.5
The void evolution in direct bonding process of $Si/Si_3$$N_4$ ∥ $SiO_2$/Si silicon wafer pairs has been investigated with an infrared camera. The voids that formed in the premating process grew in the conventional furnace annealing process at a temperature of $600^{\circ}C$. The voids are never shrunken even with the additional annealing process at the higher temperatures. We observed that the voids became smaller and disappeared with sequential scanning by our newly proposed fast linear annealing(FLA). FLA irradiates the focused line-shape halogen light on the surface while wafer moves from one edge to the other. We also propose the void shrinking mechanism in FLA with the finite differential method (FDM). Our results imply that we may eliminate the voids and enhance the yield for the direct bonding of wafer pairs by employing FLA.
게이트를 상정한 니켈 실리사이드 박막의 물성과 미세구조 변화
정영순,송오성,김상엽,최용윤,김종준,Jung Youngsoon,Song Ohsung,Kim Sangyoeb,Choi Yongyun,Kim Chongjun 한국재료학회 2005 한국재료학회지 Vol.15 No.5
We fabricated nickel silicide layers on whole non-patterned wafers from $p-Si(100)SiO_2(200nm)$/poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of $500\~900^{\circ}C$. The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as $7\Omega/sq$. even at the elevated temperature of $900^{\circ}C$. The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and $NiSi_2$ even at the $NiSi_2$ stable temperature region.
루테늄과 바나듐을 중간층으로 삽입한 인위적페리층의 교환작용과 미세구조
정영순(Youngsoon Jung),송오성(Ohsung Song),윤종승(Chong Seung Yoon) 한국자기학회 2003 韓國磁氣學會誌 Vol.13 No.5
We fabricated the synthetic ferrimagnetic layers (SyFL) of permalloy/X (X=Ru, V)/permalloy by varying the X thickness, and investigated the changes of coercivity (Hc), spin flopping field (Hsf), and saturation magnetization field (Hs) with a superconducting quantum interference device (SQUID). We also observed the microstructure with a cross sectional transmission electron microscope (TEM). Permalloy SyFL had less than 10 Oe coercivity, and Hsf and Hs could be tuned by varying ruthenium and vanadium layer thickness. The comparatively small exchange coupling in permalloy-V SyFL was caused by the intermixing of permalloy and vanadium decreasing the effective exchange coupling thickness.
정영순(Youngsoon Jung),송오성(Ohsung Song),김득중(Dugjoong Kim),최용윤(Yongyun Choi),김종준(Chongjun Kim) 한국표면공학회 2005 한국표면공학회지 Vol.38 No.1
We prepared nickel silicide layers from p-Si(100)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃~900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe microscope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.
반자성으로 커플링된 NiFe / Ru / NiFe 박막에서의 자기이방성의 변화
송오성(Ohsung Song),정영순(Youngsoon Jung),이기영(Kiyung Lee) 한국자기학회 2003 韓國磁氣學會誌 Vol.13 No.3
Synthetic ferrimagnetic layer (SyFL) with structure NiFe/Ru/NiFe which can be applied high density TMR device in free layer were prepared by an inductively coupled plasma (ICP) helicon-sputter. We proposed a model of predicting coercivity (Hc), spin-flopping field (Hsf), and saturation field (Hs) as a function of Ru thicknesses, from the equilibrium state of energies of Zeeman, exchange, and uniaxial anisotropy. We fabricated the samples of Ta(50Å)/NiFe(50Å)/Ru(4~20Å)/NiFe(30Å)/Ta(50Å), and measured the M-H loops with a superconduction quantum interference device (SQUID) applying the external field up to ±15 kOe. The result was well agreed with the proposed model, and reveal Ku = 1000 erg/㎤, Jex = 0.7 erg/㎠. We report that Hc below 10 Oe is available, and Ru thickness range should be in 4-10 Å for MRAM application. Our result implies that permalloy layers may lead to considerable magnetostriction effect in SyFL and intermixing in NiFe/Ru interfaces.
Co/Ni 복합 실리사이드 제조 온도에 따른 측벽 스페이서 물질 반응 안정성 연구
송오성(Ohsung Song),김상엽(Sangyeob Kim),정영순(Youngsoon Jung) 한국표면공학회 2005 한국표면공학회지 Vol.38 No.3
We investigate the reaction stability of cobalt and nickel with side-wall materials of SiO₂ and Si₃N₄. We deposited 15 ㎚-Co and 15 ㎚-Ni on SiO₂(200 nm)/p-type Si(100) and Si₃N₄(70 ㎚)/p-type Si(100). The samples were annealed at the temperatures of 700~1100℃ for 40 seconds with a rapid thermal annealer. The sheet resistance, shape, and composition of the residual materials were investigated with a 4-points probe, a field emission scanning electron microscopy, and an AES depth profiling, respectively. Samples of annealed above 1000℃ showed the agglomeration of residual metals with maze shape and revealed extremely high sheet resistance. The Auger depth profiling showed that the SiO₂ substrates had no residual metallic scums after H₂SO₄ cleaning while Si₃N₄ substrates showed some metallic residuals. Therefore, the SiO₂ spacer may be appropriate than Si₃N₄ for newly proposed Co/Ni composite salicide process.
송오성,정성희,정영순 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.2
The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 500.E thick, and the silicides also need to have low contact resistance at high processing temperatures. We fabricated 150ÅNi/150A-Co/p-Si(100) samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from 700℃ to 1100℃ using rapid thermal annealing. Sheet resistance of the annealed sample stack was measured with a four point probe. In addition, we investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. The sheet resistance measurements for our proposed Ni/Co composite silicide was below 5 Ω/Sq.. Moreover our newly proposed silicides were stable with the additional elevated annealing at 900℃ for 30 min. Microstructures and Auger depth profiling showed that the silicides in our samples were consisted of Ni-rich and Co-rich ternary compound. Our result implies that Ni/Co composite silicide may have excellent high temperature stability which can be employed in sub-0.1 μm CMOS process. (Received September 24, 2004)