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정세민,정광천,최유신,김도영,김철수,이준신 성균관대학교 1997 학술회의지원논문목록집 Vol.1997 No.-
ZnO shows the properties of wide conductivity variation, high optical transmittance, and excellent piezoelectricity. Using these properties of ZnO, the material applications were extended to sensors, SAW filters, solar cells, and display devices. This paper investigated transmittance influenceing factors for thin film. ZnO grown by RF magnetron sputtering. The growth rate and structural investifation were carried out in conjuction with optical transmittance characteristics of thin film ZnO. THe glass substrate temperature of 175°C exhibited a preferrential crystallization along (002)orientation. Transmittance of ZnO film deposited at the substrate temperature of 175°C showed higher than 92%. An active sputter gas was investigated with a variation of O₂partial pressure from 0 to 100% in an Ar atmosphere. ZnO film grown in 100% Ar gas shws that a reduced transmittance of 82% at the short wavelengths and decreased resistivity value. As the partial pressure of O₂gas increased the optical transmittance was increased above 90% at the short wavelengths, however, resistivity was drastically increased to higher than 10⁴Ω-cm.