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전고상 리튬 박막 전지 구현을 위해 펄스 레이저 증착법으로 LiCoO<sub>2</sub> 정극위에 성장시킨 비정질 (Li, La)TiO<sub>3</sub>고체 전해질의 특성
안준구,윤순길 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.8
1 $\mu$m이하의 전고상 리튬 박막전지의 구현을 위해 펄스 레이저 증착법을 이용하여 Pt/TiO$_2$/SiO$_2$/Si 기판위에 LiCoO$_2$정극을 증착온도와 Li/Co 간의 몰 비율을 변화시켜가며 성장시켰다. 특히, Li/Co=1.2의 조성을 갖는 LiCoO$_2$를 50$0^{\circ}C$의 증착온도에서 성장시킬 경우 53 $\mu$Ah/$cm^2$-$\mu$m의 높은 초기 용량값을 가지며 100 싸이클 후에도 67.6%의 용량값을 유지하였다. LiCoO$_2$/Pt/TiO$_2$/SiO$_2$/Si위에 고체 전해질인 (Li, La)TiO$_3$를 비정질상으로 하여 PLD방법으로 낮은 온도대역에서 증착온도를 다양하게 하여 증착하였다. 10$0^{\circ}C$의 증착온도에서 LiCoO$_2$Pt/TiO$_2$/SiO$_2$/Si위에 성장시킨 (Li, La)TiO를 가지고 LiClO$_4$ in PC 안에서 Li anode와 충$.$방전 측정 결과 약 51$\mu$Ah/$cm^2$-$\mu$m의 초기 용량값을 나타내었으며 100싸이클 후에도 90%의 훌륭한 방전용량의 보존력을 나타내었다. 비정질상의 (Li, La)TiO$_3$ 고체 전해질은 전고상 박막전지로의 구현이 가능하다. To make the all-solid-state lithium thin film battery having less than 1 fm in thickness, LiCoO$_2$ thin films were deposited on Pt/TiO$_2$/SiO$_2$/Si substrate as a function of Li/Co mole ratio and the deposition temperature by Pulsed Laser Deposition (PLD). Especially, LiCoO$_2$ thin films deposited at 50$0^{\circ}C$ with target of Li/Co=1.2 mole ratio show an initial discharge capacity of 53 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 67.6%. The microstructural and electrochemical properies of (Li, La)TiO3 thin films grown on LiCoO$_2$Pt/TiO$_2$/SiO$_2$/Si structures by Pulsed Laser Deposition (PLD) were investigated at various deposition temperatures. The thin films grown at 10$0^{\circ}C$ show an initial discharge capacity of approximately 51 $\mu$Ah/cm$^2$-$\mu$m and moreover show excellent discharge capacity retention of 90% after 100 cycles. An amorphous (Li, La)TiO$_3$ solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium thin film battery below 1 $\mu$m.
전고상 리튬 박막 전지 구현을 위해 펄스 레이저 증착법으로 LiCoO2 정극위에 성장시킨 비정질 (Li,La)TiO3 고체 전해질의 특성
안준구,윤순길 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.8
To make the all-solid-state lithium thin film battery having less than 1m in thickness, LiCoO2 thin films were deposited on Pt/TiO2/SiO2/Si substrate as a function of Li/Co mole ratio and the deposition temperature by pulsed laser deposition (PLD). Especially, LiCoO2 thin films deposited at 500oC with target of Li/Co=1.2 mole ratio show an initial discharge capacity of 53 Ah/cm2-m and capacity retention of 67.6%. The microstructural and electrochemical properies of (Li,La)TiO3 thin films grown on LiCoO2/Pt/TiO2/SiO2/Si structures by pulsed laser deposition (PLD) were investigated at various deposition temperatures. The thin films grown at 100oC show an initial discharge capacity of approximately 51 Ah/cm2-m. and moreover show excellent discharge capacity retention of 90% after 100 cycles. An amorphous (Li,La)TiO3 solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium thin film battery below 1m. 1m 이하의 전고상 리튬 박막전지의 구현을 위해 펄스 레이저 증착법을 이용하여 Pt/TiO2/SiO2/Si 기판위에 LiCoO2 정극을 증착온도와 Li/Co 간의 몰 비율을 변화시켜가며 성장시켰다. 특히, Li/Co= 1.2의 조성을 갖는 LiCoO2 를 500oC 의 증착온도에서 성장시킬 경우 53 Ah/cm2-m 의 높은 초기 용량값을 가지며 100 싸이클 후에도 67.6%의 용량값을 유지하였다. LiCoO2/Pt/TiO2/SiO2/Si 위에 고체 전해질인 (Li,La)TiO3를 비정질상으로 하여 PLD 방법으로 낮은 온도대역에서 증착온도를 다양하게 하여 증착하였다. 100oC 의 증착온도에서 LiCoO2/Pt/TiO2/SiO2/Si 위에 성장시킨 (Li,La)TiO3 를 가지고 LiClO4 in PC 안에서 Li anode 와 충방전 측정 결과 약 51 Ah/cm2-m 의 초기 용량값을 나타내었으며 100싸이클 후에도 90%의 훌륭한 방전용량의 보존력을 나타내었다. 비정질상의 (Li,La)TiO3 고체 전해질은 전고상 박막전지로의 구현이 가능하다.
전고상박막전지를 위한 (Li,La)TiO<sub>3</sub> 고체전해질의 제조와 특성
안준구,윤순길 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.9
$({Li}_{0.5}0{La}_{0.5}){TiO}_3$ (LLTO) solid electrolyte was grown on LiCo{O}_2 (LCO) cathode films deposited on $Pt/Ti{O}-2/Si{O}_2/Si$ substrate using pulsed laser deposition for all-solid-state lithium microbattery. LLTO solid electrolyte exhibits an amorphous phase at various deposition temperatures. LLTO films deposited at 10$0^{\circ}C$ showed a clear interrace without any chemical reaction with LCO, and showed an initial discharge capacity of 50 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 90 % after 100 cycles with Li anode in 1mol$ LiCl{O}_4$ in propylene carbonate (PC). The increase of capacity retention in LLTO/LCO structure than LCO itself was attributed to the structural stability of LCO cathode films by the stacked LLTO. The cells of LLTO/LCO with LLTO grown at $100^{\circ}C$ showed a good cyclic property of 63.6 % after 300 cycles. An amorphous LLTO solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium microbattery.
이수진,안준구,윤성민,박영삼,유병곤,윤순길 대한금속·재료학회 2008 METALS AND MATERIALS International Vol.14 No.4
The switching characteristics of PMC devices (device diameter = 0.5 μm) with copper-doped GexTe₁-xN electrolyte films were investigated as a function of the Te composition of the electrolyte films. Nitrogen doped in order to increase the crystallization temperature of GeTe chalcogenide films was incorporated into the Ge lattice alone, and copper in GexTe₁-xN films was incorporated into the Te lattice. The copper concentration in copper-doped GexTe₁-xN layers is directly related to the Te concentration in GeTeN films. PMC devices with copper-doped Ge75Te25N electrolytes were swept at a threshold voltage of 1.0 V and showed stable switching characteristics with a switching time of 1 μs with a set voltage of 2.5 V and a reset voltage of -4.0 V.
임베디드 커패시터의 응용을 위해 다양한 기판 위에 평가된 BMN 박막의 특성
안경찬,김혜원,안준구,윤순길,Ahn, Kyeong-Chan,Kim, Hae-Won,Ahn, Jun-Ku,Yoon, Soon-Gil 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.4
$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).
유연성 광전도 CdS 박막의 증착조건에 따른 전기적 특성 및 신뢰성 평가 연구
허성기,조현진,박경우,안준구,윤순길,Hur, Sung-Gi,Cho, Hyun-Jin,Park, Kyoung-Woo,Ahn, Jun-Ku,Yoon, Soon-Gil 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2/(Ar+H_2)$ flow ratios on polyethersulfon (PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7\;{\times}\;10^5\;{\Omega}/square$, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.
TiNxOy/TiNx 다층 박막을 이용한 고저항 박막 저항체의 구조 및 전기적 특성평가
박경우 ( Kyoung Woo Park ),허성기 ( Sung Gi Hur ),안준구 ( Jun Ku Ahn ),윤순길 ( Soon Gil Yoon ),Nguyen Duy Cuong 대한금속·재료학회 2009 대한금속·재료학회지 Vol.47 No.9
TiNxOy/TiNx multi-layer thin films with a high resistance(~kΩ) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by α and RF magnetron sputtering, respectively. TiNxOy/TiNx multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of TiNx layer(positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700℃ for 1 min exhibited good TCR value of approximately -54 ppm/℃ and a stable high resistivity around 20 kΩ/sq. with good reversibility.