농림부의 통합성과 관리시스템에 관한 사례연구

손병기(Byungki Son),이주원(Juwon Lee),윤광일(Kwangil Yoon),길웅(토론자),정양헌(토론자) 한국관리회계학회 2008 관리회계연구 Vol.7 No.3

본 연구는 농림부를 전제로 성과관리제도의 사례를 분석하고 정부기관의 통합성과관리시스템의 개발과 운영, 개선과정, 도입효과 등을 검토하였다. 연구방법은 문헌연구를 통해 모형개발에 필요한 이론적 배경을 규명하였으며, 사례연구를 통해 통합성과관리시스템의 도입절차, 실행상의 문제점과 해결과정, 도입효과를 도출하였다. 연구결과에 따르면, 첫재, 농림부는 균형성과표, 공공가치표, 유럽형품질관리 등에 기초하여 정부조직에 맞는 성과관리의 로직(투입ㆍ활동ㆍ산출과 연계하여 측정)모형을 개발하고 이를 토대로 통합성과관리시스템을 개발하였다. 둘째, 통합성과관리시스템은 전략관리, 정책프로세스관리, 개인성과관리의 하부시스템으로 구성되었고 서로 유기적으로 기능하도록 설계되었다. 셋째, 전략관리시스템은 균형성과표의 모형에 맞추어 농림부의 미션, 비전, 전략목표, 핵심성공요인, 주요성과지표를 전사, 실ㆍ국ㆍ과단위로 하부 전개하여 전략의 일체화가 실현되도록 구성하였다. 넷째, 정책프로세스관리시스템은 정책과제의 프로세스를 계획ㆍ집행ㆍ홍보ㆍ성과로 구분하고 실시간 모니터링 하여 조직성과와 개인성과를 관리하고 있다. 다섯째, 개인성과관리시스템은 성과계약평가와 주요과제평가, 혁신성과평가, 다면평가로 구성되며, 개인의 지무성과를 네가지 관점에서 평가하여 통합적으로 관리한다. 요컨대 농림부의 통합성과관리시스템은 전략과 프로세스, 개인성과에 초점을 둔 통합모형이며, 개인성과에 결과와 과정을 반영하는 특징을 갖고 있다. The Ministry of Agriculture and Forestry(MAF) was facing significant external forces for change from WTO, DDA and FTA, needs of the central government's innovations, increasing agricultural industry supporting budget, and needs more efficient and effective policy implement by public. Especially, more clear and performance oriented assessment system and more goal oriented strategy planning system were needed by the central government. These forces make adopt new strategic performance management systems as like Balanced Scorecard(BSC) to MAF. The purpose of this study is to introduce the total performance management system of MAF based on BSC, logic model and to describe functions of evaluation during the process of building an total performance management system. Data were gathered via document review, archival records, direct observation, and interviews conducted at the performance management office of MAF during three months(June to August) 2007; data analysis was ongoing during the duration of the data collection and the final writing. Major findings were: (1) the MAF's performance management system was developed on the basis of BSC, public value scorecard, logic model and European Foundation for Quality Management. (2) the performance management system has two parts; the one is organizational performance management and the other is personal performance management. Organizational performance management system consists of strategy management system and policy process management system. Personal performance management system consists of personal's task performance evaluation, part's or team;s performance evaluation and multi-evaluation. (3) The task force team for MAF's performance management develop strategy management system with sufficient support of top manager. Strategy management system has efficient communication channel to link goals, strategies and targets effectively. It has strategy map and manual of performance management. (4) Policy process management system is business process management which evaluate activity and process as well as results. It decreases errors of policy implementation, improves business process more efficiently, and shares information of process. They develop 12 patterns of process evaluation manuals. (5) Personal performance management system has an unique indicator: the rate of organization contribution. The rate of organization contribution adjusts the degree of difficulty and amount among parts and teams. Recommendations include maintaining a grant approach for performance improvement that is not reward based(rank), focusing on strategy oriented decision-making: and increasing MAF's ability and creativeness of implementation.

혈액내의 이온활동도 측정을 위한 ISFETs의 제조

손병기,이종현,신장규,Son, Byeong-Gi,Lee, Jong-Hyeon,Sin, Jang-Gyu 대한전자공학회 1985 전자공학회지 Vol.22 No.6

집복회로제조기술을 이용하여 극소형이고 초경량이며 감도, 천택도 및 안정도가 뛰어난 ISFET(lon Sensitive Field Effect Transistor)를 제조하였다. 특히 사람의 혈액속에 나타나는 중요한 4가지 이온인 H+, K+, Na+, Ca++에 대하여 각가 선택적으로 반응하는 감지막을 형성하여 H+-ISFET, K+-ISFET, Na-ISFET 및 Ca++-ISFET를 제작하였다. 이들 4가지 ISFET의 감도는 각각 52mv/pH 42mv/pk, 59mv/pNa및 28mv/pCa로 나타났으며. 1초 미만의 빠른 응답을 보였다. ISFETS for physiological applications have been developed using the techniques for integrated circuit fabrication. The silicon nitride layer was used as a H+ sensing membrane. However, K+, Na+ and Ca++ sensing ISFETS were fabricated by forming tach specification sensing membranes over the silicon nitride gate insulator. The sensitivities of the fabricated devices were very good. The typical values of measured sentivities were iEmV/pH, 42mv1, pH,5 gmV/pNa and 28mv1p0a. However, the selectivity and stability should be somewhat improved for practical physiological uses with good reliability. The response times were, less than one second, short enough for the practical uses in physiological applications.

C- 및 Fe-(Beewax.Polyethylene) 정특성 감온소자

이종현,손병기,이종덕,Lee, Jong-Hyeon,Son, Byeong-Gi,Lee, Jong-Deok 대한전자공학회 1976 전자공학회지 Vol.13 No.4

beewax와 polyethylene을 혼합한 모체에 탄색 및 연분말을 징량첨가시켜서 정특성감온소자를 제조하였다. C.(beewax·Polyethylene)시편은 온도범위 20°∼90℃에서 104-1010Ωcm의 PTC특성을 나타내었으며 제조과정상에 분말혼합 및 가압냉각방법를 도입함으로써 그 재현성과 안정성을 현저히 개선시킬 수 있었다. 또한 Fe-(betwax· polyethylene)시편은 같은 온도범위에서 102-1010Ωcm의 PTC특성을 나타내었으며 저저항범위에서 PTC효과를 얻을 수 있었다. The carbon (the iron) -beewax·polyethylene thermistors have been prepared by heating the well ground mixture of carbon (iron), beewax and polyethylene at 160℃ for one hour and by cooling it under pressure of 12kgw/cm2. The resistivity for the former (the latter) increased from 102Ω·cm (104Ω·cw) to 1010Ω·cm(1010Ω·cm) as temperature changed from 20℃ to 90℃. The resistivity, 102Ω·cm at room temperature for the former, was lower by order Q( two than that for the papostor made by the earlier reporter. The reproducibility, which has been an important Problem for this type of thermistors to be industrialized, was improved by introducing pressure in cooling procedure for both carbon and iron thermistors. The carbon (the iron) -beewax.polyethylene thermistors have been prepared by heating the well ground mixture of carbon (iron), beewax and polyethylene at 16$0^{\circ}C$ for one hour and by cooling it under pressure of 12kgw/cm2. The resistivity for the former (the latter) increased from 102$\Omega$.cm (104$\Omega$.cw) to 1010$\Omega$.cm(1010$\Omega$.cm) as temperature changed from 2$0^{\circ}C$ to 9$0^{\circ}C$. The resistivity, 102$\Omega$.cm at room temperature for the former, was lower by order Q( two than that for the papostor made by the earlier reporter. The reproducibility, which has been an important Problem for this type of thermistors to be industrialized, was improved by introducing pressure in cooling procedure for both carbon and iron thermistors.

pH-ISFET 마이크로프로브의 製作과 그 生醫學的 應用

이광만,손병기,Lee, Kwang-Man,Sohn, Byung-Ki 대한전자공학회 1988 전자공학회논문지 Vol. No.

A pH-ISEFET microprobe for in vivo measurements has been fabricated by combining ISFET (SL-IIS) chip and capillary thin film reference electrode. A two-step TCE oxidation for the gate oxide layer and multilayer encapsulation using silicone rubber and epoxy were specially used for the improvement of the stability and temperature dependence of the ISFET's. The measured sensitivit, response time and temperature dependence of the pH-ISFET microprobes are 50 mV/pH, less than one second, and - 0.01 pH/$^{\circ}$ , respectively. By operating continuously more than 40 days, a long term stability of 0.016 pH/day is obtained. The result of pH monitoring of femoral arterial blood in a rabbit is fairly good agreement with the value of blood gas analysis.

p-n Junction에서의 온도상승의 과도현상

이우일,손병기,이건일,Lee, U-Il,Son, Byeong-Gi,Lee, Geon-Il 대한전자공학회 1970 전자공학회지 Vol.7 No.4

p-n junction에 있어서 microplasma전류의 selfheating에 의한 온도상승의 과도현상을 전류가 작은 경우와 큰 경우에 대해서 고찰하였다. 전류가 작은 경우에는 microplasma site의 온도상승과 전류의 감소는 비례하며 일반적인 시정수가 정해지나 큰 전류의 경우에는 일반적으로 복잡하며 시정수도 일반적으로 정해지지 않는다. Transient phenomena in the p-n junction due to the selfheating effect of microplasma current have been investigated for the cases of small current and of large current. For the small current case, the temperature rise of the microplasma site is proportional to the current decrease and a unique time constant could be defined. However, the situation was complicated for the case of large current, and the time constant was not uniquely defined.

$Fe_{1+x}V_{2-x}O_4$ Spinel의 부성저항특성

이길식,손병기,이종덕,Lee, Gil-Sik,Son, Byeong-Gi,Lee, Jong-Deok 대한전자공학회 1977 전자공학회지 Vol.14 No.3

Fe O 와 V O 를 적당한 mole비로 혼합하여 H -CO 분위기 중 1,100℃에서 10시간씩 5∼6회 반복소성하여 Fe V O Spinel을 제조하였다. 제조된 시편의 온도에 대한 저항률을 측정하고 이로부터 활성화에너지를 구해서 시편의 도전기구를 고찰하고, x, 주위온도, 시편의 두께 및 인가전압 상승률에 대한 I-V 특성곡선을 얻어서 부성저항 발생기구의 해명을 시도하였다. Fe V -O spinel의 도전은 주로 B자리의 Fe 와 F 사이의 전자 hopping에 기인되며, 부성저항은 filament형의 통전로에 기인되는 열적현상이라 생각된다. Fe V spinels were prepared by sintering the well-ground stoichiometric mixtures of Fe O and V O at 1,10$0^{\circ}C$ under H -CO atmosphere. The activation energy for electrical conduction decreases with increasing amount of iron. The tendency of activation energy depending on the amount of iron contained clarifies that the electrical condction of the spinel is mainly due to electron hopping between Fe and Fe ions at B sites. In the experiment for negative resistance characteristics, the threshold voltage (Vth) for the samples is related to ambient temperature, thickness and raising rate of applied voltage. Vth decreases as temperature increases while Vth increases linearly with thickness and Vth increases linearly with the raising rate of applied voltage in semi-logarithmic scale. These results lead to a conclusion that current paths mainly formed by thermal breakdown are ascribed to the negative resistance phenomena. Applying this property, these vanadium iron spinels may be used for switching elements.

감광성 수용성 고분자를 이용한 Lipid 센서의 제조

박이순,김기현,손병기 ( Lee Soon Park,Gi Hyeon Kim,Byung Ki Sohn ) 한국센서학회 1993 센서학회지 Vol.2 No.1

A FET(field effect transistor) type lipid sensor was fabricated by immobilizing lipase enzyme on the gate of pH-ISFET(SiO₂/Si₃N₄). A water soluble polymer. polyvinyl alcohol(PVA) was modified with 1-methyl-4-(formylstyryl) pyridinium methosulfate(SbQ) to give a photosensitive membrane(PVA-SbQ) in which lipase was immobilized. The optimum photolithographic conditions were : spin coating speed 5,000∼6,000 rpm. L1V exposure time 20∼30 seconds, developing time in water 3040 seconds, and vacuum drying time 45 min. at room temperature with the suspension containing PVA-SbQ aqueous solution(SbQ 1mol %, 10 wt %) 200 NL, bovine serum albumin (BSA) 7.5 mg, and lipase 10 mg. The lipid sensor showed good linear calibration curve in the range of 10∼100 mM triacetin as a lipid sample.

FIPOS 기술을 이용한 SOI 구조의 실온제조

최광돈,이종현,손병기,신종욱,Choi, Kwang-Don,Lee, Jong-Byung,Sohn, Byung-Ki,Shin, Jong-Ug 대한전자공학회 1988 전자공학회논문지 Vol. No.

Porous실리콘 形成反應에서 HF濃度, 電流應度, 反應時間 및 基叛의 表面狀態가 PSL (Porous Silicon Layers)의 porosity에 미치는 影響을 실험적으로 조사하였다. PSL을 陽배化 시켜서 室溫에서 FIPPOS-SOI를 제조하는 방법을 연구하였다. 이 방법으로 100um폭의 SOI strip line을 제조하였으며 SOI의 stress제거를 위해 2단계 PSL 형성법을 이용하였다. 또한 이 실온 SOI 제조기술을 이용하여 이미 소자공정을 끝낸 집적회로를 SOI화 시킬 수 있는 방법을 제안하였다. An experimental study of the influences of HF concentration, current density, reaction time and the silicon surface, on the formation and properties of porous silicon are reported. The SOI (Silicon-On-Insulator) strip lines with 100 um width are fabricated at room temperature by anodic oxidation of PSL (Porous Silicon Layers). The stress on the silicon island induced by the anodic oxidation can be avoided by the two-step PSL formation technique. At the final step of IC fabrication process, device isolation will be achieved at room temperature by this method.

$SiO_2$薄膜의 熱的 窒化

이용수,이용현,손병기,Lee, Yong-Soo,Lee, Yong-Hyun,Sohn, Byung-Ki 대한전자공학회 1988 전자공학회논문지 Vol. No.

Thermally grown $SiO_2$ films on silicon have been thermally nitrided in the $NH_3$ gas ambient and their properties have been investigated by analyzing the AES data and the results of the I-V and the C-V measurements. The Auger depth profile show that the nitrogen-rich layers are formed at the nitrided oxide film surface and near the $SiO_2$-Si interface. The higher the nitridation temperature is, the larger the refractive index of nitroxide film is. And the thinner the oxide film to be nitrided for the same nitridation temperature is, the larger the refractive index of nitroxide film is. When thin $SiO_2$ film is thermally nitrided, the I-V characteristics show the Fowler-Nordheim conduction fashion. Flatband voltages of $SiO_2$ films are shifted by nitridation, due to the fixed charge formation.

Photolithography 에 의한 FET 형 Ca2+ 센서의 제작 및 특성

박이순,허영준,손병기 ( Lee Soon Park,Young Jun Hur,Byung Ki Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.1

FET type Ca^(2+)sensor(Ca-ISFET) was fabricated by micropool and photolithographic method utilizing photosensitive polymer as membrane materials. When OMR-83 negative photoresist was used as membrane material, it gave good sensitivity by micropool method with dioctyladipate as plasticizer but it could not be used in the photolithographic method. When poly(vinyl butyral), PVB was used as membrane material, it gave relatively high sensitivity (23±0.2 mV/decade) for Ca^(2+) concentration range of 10^(-4)∼10^(-1) mole/ℓ by photolithographic method. PVB also provided good adhesion to the pH-ISFET base device without adhesion promoter pretreatment and any plasticizer.