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Thickness Measurement of Overlayer Deposited on Single Crystal
민항기(Hang-Gi Min),변대현(Dae-Hyun Byun) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
표면 연구에서 단결정면 위에 진공 증착된 층의 두께를 측정하는 일은 쉽지 않다. 지금까지 몇 가지 측정방법들이 알려지고 있으나 이들 방법은 섬세한 고가장비를 필요로 한다. 본 연구에서는 단순히 Auger 스펙트럼을 이용하여 두께를 측정할 수 있는 간단한 방법을 제안하고 있다. 또한 구리 단결정면위에 증착된 철 원자의 두께 측정에 관한 예가 제시되고 있다. It is not easy to determine the coverage of deposited overlayers on a single crystal. There are several techniques determining the overlayer thickness. We propose, in this study, a new simple method by using Auger spectra only without any sophisticated thickness monitor. An example of iron overlayers on copper single crystals is also showed.
유기 분자선 증착법 (OMBD)에 의한 α - sexithiophene 박막의 제조와 특성
권오관(Oh-Kwan Kwon),김영관(Young Kwan Kim),손병청(Byoung-Chung Sohn),박주상(Ju-Sang Park),변대현(Dae-Hyun Byun),신동명(Dong Myoung Shin),최종선(Jong Sun Choi) 한국진공학회(ASCT) 1998 Applied Science and Convergence Technology Vol.7 No.4
유기 박막 트랜지스터의 활성층으로 사용하기 위하여 공액성 소중합체인 α-sexithiophene(α-6T)이라는 시료를 가지고 유기 분자선 증착법(OMBD)을 이용하여 박막을 제작하였으며 α-6T 박막의 성막 조건에 따른 박막의 분자 배향, 결정구조 그리고 표면특성을 알아보기 위해 angle-resolved UV/visible absorption spectroscopy, X-ray diffractometry(XRD) 그리고 atomic force microscopy(AFM)를 이용하였으며 그 분석 결과 성막 조건에 관계없이 모두 monoclinic한 결정구조를 갖으나, 초고진공, 낮은 성막 속도, 기판의 온도가 높은 조건일 경우 α-6T 분자들이 기판에 수직적으로 배열한다는 것을 확인할 수 있었다. α-Sexithiophene (α-6T) thin films were deposited by organic molecular beam deposition (OMBD) technique. The α-6T was synthesized and purified by the sublimation method. The thin films of the α-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecular orientation, crystallinity, and surface morphology of α-6T films were investigated with angle-resolved UV/visible absorption spectroscopy, X-ray diffractometry (XRD), and atomic force microscopy (AFM). It was found that the crystalline structure of α-6T films was monoclinic and independent upon substrate temperature, deposition rate, and deposition pressure. On the other hand, the α-6T molecules in the mm deposited at a low deposition rate, higher substrate temperature, and under a high vacuum tended to be aligned perpendicular to the substrate.
邊大鉉 弘益大學校 科學技術硏究所 1999 科學技術硏究論文集 Vol.10 No.1
The stability conditions of ultra thin film growth on vicinal surface are studied through kinetic Monte Ccarlo simulation(KMC). It is seen that the meandering along the step line appeared at high coverage, and these are originated from the diffusion limited aggregation(DLA) of adsorbed atoms. The meandering width depend largely on the magnitude of step detachment diffusion barrier, and have nearly same size as branch width of growth on fcc(100) surface. The stable growth on vicinal surface can be possible only in the condition of low diffusion barrier or low Schwoebel barrier, which are same in the case of growth on fcc(100) surface.
邊大鉉 弘益大學校 科學技術硏究所 1997 科學技術硏究論文集 Vol.8 No.-
With AES, LEED I/V analysis, we studied the initial growth mode of Co on Pt(100) surfaces at room temperature. We used Tensor LEED obtain the structural information. For Co/Pt(100), we could not have well ordered films. Rather, we found the cluster formation of Co without any epitaxial relation with the surface as a possible growth mode. Monte-Carlo simulation was performed to have a microscopic picture on the thermodynamic behavior of Co on Pt(100) surface. We found the interdiffusion of Co and Pt. We think the Co cluster are formed near the Pt(100) surface.
Analytic Model for the Collisional Atomic Mixing Efficiency
邊大鉉 弘益大學校 科學技術硏究所 1993 科學技術硏究論文集 Vol.3 No.-
본 연구에서는 캐스케이드 원자 혼합에 대한 해석적 모델을 개발하였다. 본 연구에서 개발한 모델은 이온과 원자 사이의 충돌 문제에 대하여 지금까지 잘 알려진 Sigmund와 Gras-Marti의 관계식보다 좀 더 현실적인 변수들을 포함하고 있다. 본 모델을 다양한 이중층계에 적용하여 혼합 효율을 계산한 결과 다이나믹 몬테칼로 모의실험 결과와 8% 오차 범위내에서 잘 일치했으며, 이 결과는 Sigmund의 모델에 의한 결과보다 나았다.
邊大鉉,閔恒基 弘益大學校 科學技術硏究所 1992 科學技術硏究論文集 Vol.2 No.-
Clean single crystal of Titanium Carbide[TiC(111)] has been studied by REELS(reflection electron energy loss spectroscopy) at room temperature for Ep(electron primary energy) between 100 and 450 eV in UHV system. Oxygen adsorption were used to invesgate the bonding strength. Temperature REELS were also measured. Loss peaks are compared with the existence band structure and DOS(density of states) calculated from several authors.
CUSPTRON의 CUSP磁氣場을 通過한 廻轉電子빔으로부터 MICROWAVE發生
邊大鉉 弘益大學校 1983 弘大論叢 Vol.15 No.2
At the University of Maryland, High-Power Microwave generation experiments have been conducted with a relativistic rotating electron beam of 2 MeV, 1-2 KA, and 10ns. Radiation is produced via the negative mass instability at various harmonics of the electron cyclotron frequency determined by the interation of the roating beam cyclotron modes and the modes of the conductiong boundary system. Using a magnetrontype conducting boundaary in the beam-wave interaction region, we are able to exercise effective mode control. This kind of device holds promise as a tunable, high-frequency microwave tube with low magnetic feilds. A table-top experiment with a nonrelativistic electron beam (≤100 KeV) has been initiated in order to investigate this concept under more practical conditions. A Pierce type electron gun with a thermionic annular cathode produces a hollow eletron beam of perveance k=0.7×10??(I/V??). Passing through a magnetic cusp field, the beam becomes a well-defined roating hollow beam with 3cm diameter and 0.2cm thickness. In this paper,we present the initial operating results of the cusptron experiment with a low voltage beam (≤20 KeV).
The Study of Silicide Formation by Ion Beam Mixing
邊大鉉 弘益大學校 科學技術硏究所 1993 科學技術硏究論文集 Vol.3 No.-
Pd films deposited on si(111) were irradiated with Ar? ions at room temperature. Transmission electron microscopy (TEM), X-ray diffraction (XRD), and Auger electron spectroscopy (AES) were employed to study the grain growth due to the Ar? bombardment and the change in silicide formation temperature during the post-annealing treatment after Ar? bombardment. Compared with 8 nm for the as-deposited sample, the grain size was increased up to 25∼30 nm after ion bombardment. Moreover, the Pd₂Si formation temperature after irradiation is appreciably decreased as compared with the as-deposited sample. These lower reaction temperatures for Pd-silicide formation are discussed in terms of the dispersions of interfacial contaminants such as oxides or impurities owing to the atomic mixing process.