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박막제조공정이 Ti-Al-N 박막의 물리적 특성에 미치는 영향
문두수(Doo-Soo Moon) 산업기술교육훈련학회 2012 산업기술연구논문지 (JITR) Vol.17 No.1
It is well known that aluminium alloy is a very useful material due to light weight and high strength compared to any other metallic materials. However, low hardness limits its applications. In the past two decades, surface modification technology has been widely developed to enhance surface properties and extend the service lifetime of materials. With the thin film coating, such as TiN thin film, they improved tribological properties of wear resistance and durability of cutting tools, drills or end mills using their high hardness. The incorporation of aluminum in the cubic fcc TiN structure leads to enhanced thermal stability of the coating. At high temperatures, aluminum forms a stable oxide of Al2O3 upon exposure to oxidizing conditions, thus protecting the underlying Ti–Al–N layers. In thin sport, We have successfully developed TiAlN thin film as hard coating on Al 2024 alloy using magnetron sputtering process to overcome the low hardness of Al alloy through the surface modification technology. Ti-6Al-4V alloy was adopted as target material which has affinity of Al component to the Al 2024 substrate for the TiAlN coatings. Coating experiments were carried out with different process conditions of nitrogen gas pressure to understand the influence of nitrogen in TiAlV coating on the tribological properties.
안병건,추관식,문두수,안정식,김영대,김형자,이규용 釜慶大學校 2002 釜慶大學校 論文集 Vol.7 No.-
Low energy high current N_2 ion beam was used to modify the morphology and chemical composition of cemented carbide WC-Co(Co:10 wt%, TiC + TaC:15 wt%, WC:bal) hard material surface for the fabrication of the TiN thin film by sol-gel method. The effects of ion beam treatment on preparation of the TiN thin film by sol-gel mothod were investigated by XPS, SEM, AFM and GXRD. According to the N_2 ion beam bombardment, the surface roughness was increased and TiC binders in WC were dissolved. The dissolved Ti was recombind with nitrogen ion to form the TiN nucleuses which were acted as seeds for the forming of the TiN thin film on the cemented WC-Co surface. Besides, the sputter deposited Ti interlayer prevented the diffusion of TiO_2 sol into the porous WC-Co during the formation of TiN thin film.