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Plasma Etching of Silicon at a High Flow and a High Pressure of NF$_3$ in Reactive Ion Etching
권희태,김우재,신기원,이환희,이태현,강민호,권기청 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.74 No.12
Capacitively coupled plasma reactive ion etching of silicon by injecting nitrogen trifluoride (NF$_3$) gas was conducted, and the etching process was studied with a residual gas analyzer and an optical emission spectroscopy. During the etching of silicon by the NF$_3$ plasma, the currents of F$^+$ and SiF$_3^+$ ions were obtained from the residual gas analyzer. At the same time, the line intensity of fluorine was measured using optical emission spectroscopy. The ion currents of F$^+$ and SiF$_3^+$ and the line intensity of fluorine were highest for etching at high pressure. With the results of this study, the general characteristics of reactive ion etching of silicon by using NF$_3$ plasma were confirmed. In addition, by simply changing the flow rate of NF$_3$, a high NF$_3$ flow rate was found to result in a high etch rate because of the reduced residence time.
잔류가스분석기 및 발광 분광 분석법을 통한 중간압력의 NF3 플라즈마 실리콘 식각 공정
권희태,김우재,신기원,이환희,이태현,권기청 한국반도체디스플레이기술학회 2018 반도체디스플레이기술학회지 Vol.17 No.4
NF3 Plasma etching of silicon was conducted by injecting only NF3 gas into reactive ion etching. NF3 Plasma etching was done in intermediate pressure. Silicon etching by NF3 plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by NF3 plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that NF3 plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.
잔류가스분석기 및 발광 분광 분석법을 통한 중간압력의 NF<sub>3</sub> 플라즈마 실리콘 식각 공정
권희태,김우재,신기원,이환희,이태현,권기청,Kwon, Hee Tae,Kim, Woo Jae,Shin, Gi Won,Lee, Hwan Hee,Lee, Tae Hyun,Kwon, Gi-Chung 한국반도체디스플레이기술학회 2018 반도체디스플레이기술학회지 Vol.17 No.4
$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.
안송엽,권희태 圓光大學校大學院 2000 論文集 Vol.24 No.-
유동상은 반응기 형태의 변화에 따라 설계인자 및 운전 효율이 크게 변화하는 데, 효율적 운전을 위해서는 영향인자 간의 상호관계를 파악하는 것이 대단히 중요한 문제이다. 미생물막의 형성은 상향유속의 영향이 큰 것으로 나타났으며 최적의 상향유속은 1.17cm/sec∼1.32cm/sec로 나타났다. 각 반응기의 형태, 즉 A/H비에 관계없이 최대의 처리효율을 보이는 media 충전량은 18%이었고, BOD 부하 4.5kg-BOD5/㎥·d에서 상향유속은 1.32cm.sec이었다. 1.17cm/sec이하의 낮은 상승유속에서는 처리효율을 저하시킬 수 있는 bioparticles의 합체현상이 발생함을 알 수 있었다. A/H비에 따라 최대 처리효율은 94∼92%로 나타나므로, A/H비가 처리율에 영향을 준다는 것을 알 수 있었다. Bioparticles의 합체현상으로 인한 처리율의 감소를 막을 수 있는 최소유량은 A/H비에 따라서 다르게 나타난다. Process intensification without any increase in bed requires the exploitation of fluid mechanical phenomena as the basis for elegant solutions to the process engineering problems which result from the need to retain and control the immobilized biomass, and for biomass recovery. The fluidized bed biological reactor provides a solution to these needs. The wastewater treatment characteristics of the fluidized bed was filled with sand media. Indirect aeration were studied experimentally. The optimal range of velocities was 1.17cm/sec∼1.32cm/sec, and under the BOD loading condition of 4.5kg-BOD5/㎥·d, the media concentration appeared to 18% and surface upflow velocity also 1.32cm/sec for the maximum BOD removal. The BOD loading and F/M ratio condition of some of the 'steady-state' reactor, a degree would be expected. The medium effluent unfiltered BOD5 was 92%∼94%, at an HRT of 32 minutes.