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Rajagopal Reddy, V.,Sri Silpa, D.,Yun, H.J.,Choi, C.J. Academic Press 2014 Superlattices and microstructures Vol.71 No.-
The electrical and structural properties of a fabricated W/p-InP Schottky barrier diode (SBD) have been investigated as a function of annealing temperature. The W/p-InP SBD exhibits good rectification behavior. The barrier height (BH) and ideality factor of the W/p-InP SBD are determined to be 0.82eV (I-V)/0.98eV (C-V) and 1.34, respectively. However, the BH is increases to 0.87eV (I-V)/1.08eV (C-V) after annealing at 300<SUP>o</SUP>C. When the SBD is annealed at 400<SUP>o</SUP>C, the BH decreases to 0.74eV (I-V)/0.86eV (C-V) and the ideality factor increases to 1.45. Results indicate that a maximum BH is obtained on the W/p-InP SBD at 300<SUP>o</SUP>C. Norde method is also employed to determine BHs of W/p-InP SBD which are in good agreement with those estimated by the I-V method. Further, Cheung method is used to estimate the series resistance of the W/p-InP SBD, and the consistency is checked using the Norde method. Besides, the energy distribution of interface state density is determined from the forward bias I-V data at different annealing temperatures. Auger electron spectroscopy and X-ray diffraction studies revealed that the formation of W-P interfacial phases at the W/p-InP interface may be the cause for the increase of BH upon annealing at 300<SUP>o</SUP>C. AFM results indicated that the overall surface morphology of the W/p-InP SBD did not change significantly at elevated temperatures.
Dasaradha Rao, L.,Shanthi Latha, K.,Rajagopal Reddy, V.,Choi, C.J. Pergamon Press [etc.] 2015 Vacuum Vol.119 No.-
The effects of rapid thermal annealing on the electrical and structural properties of a fabricated Au/Y/p-InP Schottky barrier diode (SBD) have been investigated. The estimated Schottky barrier heights (SBHs) of the as-deposited and 200 <SUP>o</SUP>C annealed Au/Y/p-InP SBDs are found to be 0.62 eV (I-V)/0.83 eV (C-V) and 0.63 eV (I-V)/0.92 eV (C-V) respectively. However, the SBH increases to 0.65 eV (I-V)/0.96 eV (C-V) upon annealing at 300 <SUP>o</SUP>C. Further, the SBH slightly decreases to 0.59 eV (I-V)/0.78 eV (C-V) for contact annealed at 400 <SUP>o</SUP>C. The SBH, ideality factor and series resistance of the Au/Y/p-InP SBD are estimated by Norde and Cheung's methods. Also, the discrepancy between SBHs estimated from I-V, C-V, Norde and Cheung's methods are described and discussed. It is noted that the interface state density of the Au/Y/p-InP SBD decreases upon annealing at 300 <SUP>o</SUP>C and then slightly increases after annealing at 400 <SUP>o</SUP>C. The AES and XRD measurements have revealed that the formation of Au-In, Au-P and Y-P interfacial phases at the interface may be the reason for the increase and decrease of SBHs upon annealing. The AFM results showed that the surface morphology of the Au/Y Schottky contact is fairly smooth at various annealing temperatures.
Rajagopal Reddy, V.,Janardhanam, V.,Leem, C.H.,Choi, C.J. Academic Press 2014 Superlattices and microstructures Vol.67 No.-
The temperature dependent electrical characteristics of Se/n-GaN Schottky barrier diode have been investigated in the temperature range of 130-400K in the steps of 30K. The estimated barrier height (φ<SUB>bo</SUB>) and ideality factor n are found to be 0.46eV and 3.83 at 130K, 0.92eV and 1.29 at 400K. The φ<SUB>bo</SUB> and n are found to be strongly temperature dependent and while the φ<SUB>bo</SUB> decreases and the n increase with decreasing temperature. Such behavior of φ<SUB>bo</SUB> and n is attributed to Schottky barrier inhomogeneities, explained by the assumption of Gaussian distribution of barrier heights at the metal/semiconductor interface. Experimental results revealed the existence of a double Gaussian distribution with mean barrier height values of 1.33 and 0.90eV and standard deviations (σ<SUB>o</SUB>) of 0.0289 and 0.010V, respectively. The modified ln(I<SUB>o</SUB>/T<SUP>2</SUP>)-(q<SUP>2</SUP>σ<SUB>o</SUB><SUP>2</SUP>/2k<SUP>2</SUP>T<SUP>2</SUP>) versus 10<SUP>3</SUP>/T plot gives φ<SUB>bo</SUB> and Richardson constant (A<SUP>*</SUP>) values as 1.30 and 0.88eV, 23.6 and 19.2 A/cm<SUP>2</SUP> K<SUP>2</SUP> at 400 and 130K, respectively without using the temperature coefficient of the barrier height. Further, the barrier height obtained from C-V method decreases with an increase in temperature. It is also noted that the barrier height value estimated from the C-V method is higher than that estimated from the I-V method at various temperatures. Possible explanations for this discrepancy are presented. The interface state density (N<SUB>ss</SUB>) is found to be decreased with an increasing temperature. The reverse-bias leakage current mechanism of Se/n-GaN Schottky diode is investigated. Both Poole-Frenkel and Schottky emissions are described and discussed.
Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer
Jyothi, I.,Janardhanam, V.,Rajagopal Reddy, V.,Choi, C.J. Academic Press 2014 Superlattices and microstructures Vol.75 No.-
The electrical characteristics of a Pt/n-type Ge Schottky diode with a pyronine-B (PYR-B) interlayer prepared by spin coating was investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It was observed that the barrier height of Pt/PYR-B/n-type Ge (0.65eV) was higher than that of the conventional Pt/n-type Ge Schottky diode (0.58eV). This is attributed to the fact that the organic interlayer increases the effective barrier height by influencing the space-charge region of Ge. The introduction of the PYR-B interlayer led to a reduction of the interface state density in the Pt Schottky contact to n-type Ge. The electric field dependence of the reverse leakage current revealed that Schottky emission and Poole-Frenkel emission mechanisms dominated the reverse current in the Pt/n-type Ge and Pt/PYR-B/n-type Ge Schottky diodes, respectively.
Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
Ashok Kumar, A.,Dasaradha Rao, L.,Rajagopal Reddy, V.,Choi, C.J. Elsevier 2013 Current Applied Physics Vol.13 No.6
We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements have been carried out in the temperature range of 300-400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Φ<SUB>bo</SUB>) and ideality factor (n) are estimated from I-V characteristics. It is observed that there is a decrease in n and an increase in the Φ<SUB>bo</SUB> with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Φ<SUB>bo</SUB> and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (R<SUB>s</SUB>) is calculated by Chenug's method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole-Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance-voltage (C-V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman's method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.
Sooty Mould Infection on Mulberry-Management
Reddy, C.Rajagopal,Reddy, P.Lakshmi,Misra, Sunil,Reddy, K.Dharma,Sujathamma, P. Korean Society of Sericultural Science 2003 International Journal of Industrial Entomology Vol.6 No.2
Black sooty mould fungus was observed on the upper side of the mulberry leaves caused by the Capnodium sp. This fungus develops with the utilization of the honeydew dropped by the whiteflies. Few selected insecticides like Monocrotophos, Chloropyriphos and Nuvan were tried to control the whitefly incidence and followed by the application of Maida (wheat flour paste) and Starch solution separately to control the incidence of the Capnodium on mulberry. It is found that a significant control of the whitefly incidence with the application of Nuvan (2 $m\ell$/L) and followed by Chloropyriphos (2 $m\ell$/L) and Monocrotophos (1.6 $m\ell$/L) and also a significant control of sooty mould infection were recorded with Starch and Maida application.