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Yunjung Hong,Sangil Jeon,Suein Choi,Sungpil Han,Maria Park,Seunghoon Han 대한생리학회-대한약리학회 2021 The Korean Journal of Physiology & Pharmacology Vol.25 No.6
Fixed-dose combinations development requires pharmacokinetic drugdrug interaction (DDI) studies between active ingredients. For some drugs, pharmacokinetic properties such as long half-life or delayed distribution, make it difficult to conduct such clinical trials and to estimate the exact magnitude of DDI. In this study, the conventional (non-compartmental analysis and bioequivalence [BE]) and modelbased analyses were compared for their performance to evaluate DDI using amlodipine as an example. Raw data without DDI or simulated data using pharmacokinetic models were compared to the data obtained after concomitant administration. Regardless of the methodology, all the results fell within the classical BE limit. It was shown that the model-based approach may be valid as the conventional approach and reduce the possibility of DDI overestimation. Several advantages (i.e., quantitative changes in parameters and precision of confidence interval) of the model-based approach were demonstrated, and possible application methods were proposed. Therefore, it is expected that the model-based analysis is appropriately utilized according to the situation and purpose.
Hong, Sung-Hoon,Lee, Heon,Choi, Yunjung,Lee, Young-Kook Elsevier 2011 CURRENT APPLIED PHYSICS Vol.11 No.5
<P><B>Abstract</B></P><P>The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100ns) and large difference of resistance on–off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100ns reset pulse.</P>