http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
MBE Growth of ZnSe Films on Lattice-Matched InxGa1-xAs Substrates
Takashi KARITA,Kazuhiko Suzuki,Takayuki SAWADA,Kazuaki IMAI,Satoru SETO 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Raman scatering of ZnSe layers grown on nearly latice matched InxGa1-xAs substrates (x = 0 -0.092) by using molecular beam epitaxy (MBE) have ben investigated. The Raman shift of the ZnSe longitudinal optical (LO) phonon stays nearly constant while the line width Γ increases with increasing indium molar fraction of the substrates. The results are analyzed based on the two-parameter spatial corelation model. The intrinsic line width of ZnSe LO is found to depend strongly on the spatial corelation length of the substrate.