http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Interpretation of the 勿/毋+巳+V/(于)+N and Other Related Constructions in Shang Chinese: Part I
Ken-ichi TAKASHIMA 세계한자학회 2023 世界漢字硏究 Vol.6 No.2
This paper attempts to show that the word s? 巳(祀) used after the negative w? 勿 or w? 毋 functions as a “Vintransitive” (all the abbreviations and references used in this paper are given at the end of Part I). As such, it forms a VP, 勿/毋V1V2, where V2 is always one of the six “Type-A ritual Vs”—one being d?o 禱 ‘to pray’, the rest given in the paper. The semantic relationship between V1 (巳/祀) and V2 is closely examined. There are also inscriptions in which V1 is used before y? 于, a “multidirectional” preposition. This is labelled as “Nloc in the sense of ‘in, at’ (not ‘to, for’)” in the construction given in the title. The paper accounts for its motive principle. The paper argues that 巳/祀 is a Vaction meaning “conduct s?-providential ritual”. It was done at a place to seek divine direction and guidance from the deity or Power believed to have dwelt in situ. Originally presented in Takashima (2009a), this paper delves further into linguistic, philological, and cultural aspects of the 巳-ritual couched in the VP, 勿/毋V1(=巳/祀)V2. A major reason for its use is to contrast the 巳-ritual with other rituals and sacrifices. The details will be explained with examples. Part I covers “Examination I: Zh? Sh?ngy?’s Questions and Zh?ng Y?j?n’s Interpretation”. The paper answers the former and evaluates the latter. Part II begins with “Examination II: Qi? X?gu?’s Interpretation” and ends with the conclusions of the entire paper.
Chemistry of Rare Earth Containing Oxide-fluoride Compounds
Takashima, Masayuki,Yonezawa, Susumu,Kim, Jae-Ho,Nishibu, Shiori 한국공업화학회 2004 Journal of Industrial and Engineering Chemistry Vol.10 No.7
The binary rare-earth oxide fluorides, Ln₂Ln'₂O₃F_(6) in which Ln and Ln' are different rare earths, were synthesized by the solid state reaction between Ln₂O₃ and Ln'F₃ at a temperature around 1000℃. Among Ln₂Ln'₂O₃F_(6) compounds, Nd₂Eu₂O₃F_(6) gave the conductivity of 3.5 Sm^(-1) at 600℃ under PO₂= 0.4 Pa, and the transport numbers of oxide ion and electron were measured to be around 0.9 and less than 0.05, respectively, at a temperature ranging from 500 to 700℃. The crystal structure of Nd₂Eu₂O₃F_(6) was determined to be the monoclinic lattice with the parameters of a_(0) = 0.396 nm, b_(0) = 1.13 nm, c_(0) = 0.562 nm, β = 134.84°, Z = 1. Ld₂Ln'₂O₃F_(6) compounds were applicable properties as an oxide ion-conducting solid electrolyte. Besides, new oxide-fluoride glasses containing large amount of rare earth elements consist of LnF₃-BaF₂-AlF₃-GeO₂ were obtained reproducibly by quenching from the melts. The glasses were found to exhibit unique optical properties such as fluorescence.
AN ALGORITHM FOR COMPUTING A SEQUENCE OF RICHELOT ISOGENIES
Takashima, Katsuyuki,Yoshida, Reo Korean Mathematical Society 2009 대한수학회보 Vol.46 No.4
We show that computation of a sequence of Richelot isogenies from specified supersingular Jacobians of genus-2 curves over $\mathbb{F}_p$ can be executed in $\mathbb{F}_{p2}$ or $\mathbb{F}_{p4}$ . Based on this, we describe a practical algorithm for computing a Richelot isogeny sequence.
An algorithm for computing a sequence of Richelot isogenies
Katsuyuki Takashima,Reo Yoshida 대한수학회 2009 대한수학회보 Vol.46 No.4
We show that computation of a sequence of Richelot isogenies from specified supersingular Jacobians of genus-2 curves over F_(p) can be executed in F_{p^2} or F_{p^4}. Based on this, we describe a practical algorithm for computing a Richelot isogeny sequence. We show that computation of a sequence of Richelot isogenies from specified supersingular Jacobians of genus-2 curves over F_(p) can be executed in F_{p^2} or F_{p^4}. Based on this, we describe a practical algorithm for computing a Richelot isogeny sequence.
Shutaro Takashima,Keiko Nakagawa,Tadakazu Hirai,Nobuhiro Dougu,Yoshiharu Taguchi,Etsuko Sasahara,Kazumasa Ohara,Nobuyuki Fukuda,Kortaro Tanaka 대한신경과학회 2012 Journal of Clinical Neurology Vol.8 No.3
Background and Purpose Not only clinical factors, including the CHADS2 score, but also echocardiographic findings have been reported to be useful for predicting the risk of ischemic stroke in patients with nonvalvular atrial fibrillation (NVAF). However, it remains to be determined which of these factors might be more relevant for evaluation of the risk of stroke in each patient. Methods In 490 patients with NVAF who underwent transesophageal echocardiography (TEE),we examined the long-term incidence of ischemic stroke events (mean follow-up time, 5.7±3.3years). For each patient, the predictive values of gender, the CHADS2 risk factors (congestive heart failure, hypertension, age =75 years, diabetes mellitus, history of cerebral ischemia), the CHADS2score, and the findings on echocardiography, including TEE risk markers, were assessed. Results The ischemic stroke rate was significantly correlated with the CHADS2 score (p<0.05). According to the results of univariate analyses, age =75 years, history of cerebral ischemia, CHADS2score =2, and presence of TEE risk were significantly correlated with the incidence of ischemic stroke. Cox proportional hazards regression analyses identified age =75 years and presence of TEE risk as significant predictors of subsequent ischemic stroke events in patients with NVAF. As compared with that in persons below 75 years of age without TEE risk, the ischemic stroke rate was significantly higher in persons who were =75 years of age with TEE risk (4.3 vs. 0.56%/year,adjusted hazard ratio=8.94, p<0.001). Conclusions TEE findings might be more relevant predictors of ischemic stroke than the CHADS2score in patients with NVAF. The stroke risk was more than 8-fold higher in patients aged =75 years with TEE risk.
Hiroshi Takashima,조명희,Tomoyasu Taniyama,Mitsuru Itoh 한국물리학회 2017 Current Applied Physics Vol.17 No.5
Epitaxial SrTiO3 thin film was grown on 1%-Nb-doped SrTiO3 (001) substrate by pulsed laser deposition (PLD). Post-annealing at 1050 C drastically changes the particle-type surface morphology of the asgrown film to a well-defined step-terrace structure. An atomically smooth surface was obtained with a step height of about 0.4 nm, which corresponds to one-unit-cell of SrTiO3 (a ¼ 0.3905 nm). The dielectric constants εr at 300 and 2 K were found to be 120 and 520 at 100 kHz, respectively. The dielectric losses at 300 and 2 K were 2.0 105 and 1.2 105 at 100 kHz, respectively. Temperature dependence of the dielectric properties showed suppressed quantum paraelectricity. Post-annealed films with an atomically smooth surface used as an insulating layer contribute to the high performance of thinfilm electroluminescent (TFEL) heterostructure devices. Preparation of ideal interfaces of different materials may aid in the development of heterostructure electronic devices.