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Efficient dye-sensitized solar cell sub-modules
Hironori Arakawa,Takeshi Yamaguchi,Takanori Sutou,Yutaro Koishi,Nobuyuki Tobe,Daisuke Matsumoto,Takuma Nagai 한국물리학회 2010 Current Applied Physics Vol.10 No.2
Two topics with dye-sensitized solar cell (DSC) development were introduced. The one was development of an efficient glass–substrate 10 cm-by-10 cm DSC sub-modules with current-collecting Ag grids using N719 dye (gac = 8.0%, Jsc = 16.8 mA/㎠, Voc = 0.71 V, ff = 0.67). Accelerated long-term stability tests were conducted using JIS C-8938 environmental and endurance test methods for amorphous-Si solar cell modules,which included a dry heat cycle test (-40 ℃ to 90 ℃, 200 cycles), a heat–humidity test (-40 ℃ to 90 ℃ with 85% humidity, 10 cycles) and a light-soaking test (255 W/m2 (300–700 nm), 500 h). The results suggested DSC using methoxypropionitrile (MPN) electrolyte solvent has a promising future to commercialization of DSC. The other was development of a new preparation method for highly efficient plastic–substrate DSC. This method consisted of important basic technologies such as press without heat treatment,light-confining effect by light scattering TiO2 large particles, binder-free water paste of TiO2 and UV–O3 treatment of TiO2 photoelectrode. The plastic–substrate DSC prepared by this new method showed a very high efficiency, 8.1% (0.29 ㎠) under simulated solar light (100 mW/㎠, AM1.5). Further,an efficient plastic–substrate 10 cm-by-10 cm DSC sub-module with current-collecting Ti grids using N719 dye (gac = 4.5%, Jsc = 10.9 mA/㎠, Voc = 0.72 V, ff = 0.57) was successfully prepared.
이정민,송윤흡,Yuta Saito,Yuji Sutou,Junichi Koike 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.9
A selective switching device utilizing a phase-change material was investigated. In this work, we present a new concept to realize serially a selective switching and memory operation in a multiple phase-change memory with only phase-change materials without any semiconductor switching device. A phase-change material for selective switching can be expected to have a higher resistance amorphous phase and to show lower melting and crystallization temperatures than a phase-change material for a memory. Here, we present a structural method to obtain the above requirements. In addition, we confirm the switching operation by a selective current pulse for multiple phase-change materials from the experiment. From these results, we expected that one of the multiple phasechange materials can be replaced in a switching device without the need for an additional selective device, and that such a device would be feasible for 3-dimensional PCM architecture.
Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
An, J. s.,Choi, C. m.,Shindo, S.,Sutou, Y.,Kwon, Y. w.,Song, Y. h. Springer Science + Business Media 2016 Journal of Computational Electronics Vol.15 No.4
<P>This paper investigates the impact of contact resistance on the memory window in phase-change random access memories (PCRAMs) using (GST). We discuss the increase of contact resistance, as device is scaled down to a nanometer size and the effects of contact resistivity changes with respect to the resistance window between the set and reset states. In a contact area of , the contact resistance in the set state occupies more than 80 % of the total resistance, and the occupied area increases as the contact area is scaled upward. The memory window is significantly degraded as the set resistance increases because of the increasing contact resistance. To maintain the memory window with more than two orders of magnitude of the resistance in a area, the contact resistance should be decreased to less than 60 % of that of a area by reducing contact resistivity or by some other method. We examine the reduction of contact resistance achieved by adopting a three-dimensional contact structure, and we propose this structure as a candidate for the scaled PCRAM.</P>
An, J.S.,Choi, C.M.,Shindo, Y.,Sutou, Y.,Jeong, H.S.,Song, Y.H. IET 2016 Electronics letters Vol.52 No.18
<P>The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.</P>
Saito, Y.,Yun Heub Song,Jung Min Lee,Sutou, Y.,Koike, J. IEEE 2012 IEEE electron device letters Vol.33 No.10
<P>A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge2Sb2Te5 (GST) and Ge1Cu2Te3 (GCT) are utilized as phase-change materials to realize high-and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10(3), 10(4), and 10(5) Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.</P>