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Charge-Spin Correlation in van der Waals Antiferromagnet NiPS3
Kim, So Yeun,Kim, Tae Yun,Sandilands, Luke J.,Sinn, Soobin,Lee, Min-Cheol,Son, Jaeseok,Lee, Sungmin,Choi, Ki-Young,Kim, Wondong,Park, Byeong-Gyu,Jeon, C.,Kim, Hyeong-Do,Park, Cheol-Hwan,Park, Je-Geun American Physical Society 2018 Physical Review Letters Vol.120 No.13
Oh, Ji Seop,Yu, Ho-Sung,Kang, Chang-Jong,Sinn, Soobin,Han, Moonsup,Chang, Young Jun,Park, Byeong-Gyu,Lee, Kimoon,Min, Byung Il,Kim, Sung Wng,Kim, Hyeong-Do,Noh, Tae Won American Chemical Society 2016 Chemistry of materials Vol.28 No.21
<P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2016/cmatex.2016.28.issue-21/acs.chemmater.6b03357/production/images/medium/cm-2016-033576_0006.gif'></P>
Cheng-Tai Kuo,Karuppannan Balamurugan,Hung Wei Shiu,Hyun Ju Park,Soobin Sinn,Michael Neumann,한문섭,장영준,Chia-Hao Chen,Hyeong-Do Kim,박제근,Tae Won Noh 한국물리학회 2016 Current Applied Physics Vol.16 No.3
We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ~0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.
Insulating-layer formation of metallic LaNiO<sub>3</sub> on Nb-doped SrTiO<sub>3</sub> substrate
Yoo, Hyang Keun,Chang, Young Jun,Moreschini, Luca,Kim, Hyeong-Do,Sohn, Chang Hee,Sinn, Soobin,Oh, Ji Seop,Kuo, Cheng-Tai,Bostwick, Aaron,Rotenberg, Eli,Noh, Tae Won American Institute of Physics 2015 Applied Physics Letters Vol.106 No.12
Oh, Ji Seop,Kim, Minu,Kim, Gideok,Lee, Han Gyeol,Yoo, Hyang Keun,Sinn, Soobin,Chang, Young Jun,Han, Moonsup,Jozwiak, Chris,Bostwick, Aaron,Rotenberg, Eli,Kim, Hyeong-Do,Noh, Tae Won Elsevier 2018 Current Applied Physics Vol.18 No.6
<P><B>Abstract</B></P> <P>We investigated the atomic configuration and the electronic structure of a BaBiO<SUB>3</SUB> (BBO) thin film and its (001) surface. It was theoretically predicted that two-dimensional electron gases would be formed when the film is BiO<SUB>2</SUB>-terminated. We deduced depth-profile information for a BBO thin film using angle-dependent X-ray photoemission spectroscopy. Analysis of the spectral weights of the Ba 3d and Bi 4<I>f</I> core levels confirmed that the BBO film should have a BiO<SUB>2</SUB>-terminated topmost layer. We used <I>in-situ</I> angle-resolved photoemission spectroscopy to experimentally determine the electronic structure of a BBO thin film and found no metallic surface state. We distinguished surface states from bulk states by evaporating potassium atoms <I>in-situ</I> on the surface. A surface state near the bottom of the topmost bulk valence band, which was predicted by the DFT calculations, was identified. However, other surface states well separated from the bulk states were not observed. Our results provided evidence that descriptions of the BBO electronic structure require more detailed and elaborate approaches.</P> <P><B>Highlights</B></P> <P> <UL> <LI> An atomic configuration and a surface state of a BiO<SUB>2</SUB>-terminated BaBiO<SUB>3</SUB> thin film were studied. </LI> <LI> The depth-profile information of our BaBiO<SUB>3</SUB> film was investigated and it had a BiO<SUB>2</SUB> termination layer. </LI> <LI> Contrary to the theoretical proposal for a 2DEG on a BiO<SUB>2</SUB>-terminated BaBiO<SUB>3</SUB>, no surface metallic state was observed. </LI> <LI> The absence of the metallic surface state may be attributed to misprediction on the band gap size. </LI> </UL> </P>