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Effect of curing temperature on nano-silver paste ink for organic thin-film transistors.
Kim, Minseok,Koo, Jae Bon,Baeg, Kang-Jun,Noh, Yong-Young,Yang, Yong Suk,Jung, Soon-Won,Ju, Byeong-Kwon,You, In-Kyu American Scientific Publishers 2012 Journal of Nanoscience and Nanotechnology Vol.12 No.4
<P>Silver (Ag) metal electrode having 20 microm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottom-contact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of -10(-3) cm2/Vs, 0.36 V, and -10(2), respectively.</P>
Jinwoo Noh,Minseok Jo,Chang Yong Kang,Gilmer, David,Kirsch, Paul,Lee, Jack C.,Byoung Hun Lee IEEE 2013 IEEE electron device letters Vol.34 No.9
<P>A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfO<SUB>x</SUB>-based resistance change random access memory (ReRAM) devices has been developed. Time-dependent device characteristics, because of the dynamic change in the filament size, were emulated using a modified ion migration model. This model describes the difference between SET and RESET operations using a current crowding effect This model is a semiempirical model that can simultaneously match both dc and ac characteristics of HfOx-based ReRAM devices.</P>