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Min Sagong,Kyungwhoon Cheun IEEE 2012 IEEE communications letters Vol.16 No.6
<P>The performance of uplink cellular OFDMA networks transmitting multiple QAM symbols per hop is evaluated under log-normal shadowing and Rayleigh fading without resorting to a Gaussian approximation of the inter-cell interference. The derived interference statistic is observed to deviate significantly from the Gaussian distribution which may be exploited to dramatically enhance the network performance. It is also observed that the network performance is highly dependent on the number and the geometry of the QAM symbols transmitted within a hop, especially for large code frame lengths.</P>
Min Sang Park,Kyong Taek Lee,Chang Yong Kang,Gil-Bok Choi,Hyun Chul Sagong,Chang Woo Sohn,Byoung-Gi Min,Jungwoo Oh,Majhi, Prashant,Hsing-Huang Tseng,Lee, Jack C,Jeong-Soo Lee,Jammy, Raj,Yoon-Ha Jeong IEEE 2010 IEEE electron device letters Vol.31 No.10
<P>We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, the drive current increases because Si/SiGe heterojunction layers form a SiGe quantum well, which reduces carrier scattering. Conversely, SiGe samples without a Si capping layer suffer severe interface degradation, due to Ge diffusing into the gate dielectric. Devices using a Si capping layer have enhanced RF performance and reduced low-frequency noise, which is a key factor affecting phase noise. There is an increase in the RF figures of merit. These benefits indicate that a Si capping layer should be used in SiGe channel pMOSFETs.</P>