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ZhEng, D. W.,Huang, Y. P.,Tang, T. A.,Cui, Q.,Li, A. Z.,Zhou, S. X.,He, Z. J.,Chen, Z.,Zhang, X. J.,Kwor, R. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
A novel process for silicon on insulator(SOI) technology has been presented. Single crystal Si is grown by molecular beam epitaxy(MBF) on a porous silicon(PS) system consisting of two layers of PS with different microstructures. Subsequent lateral oxidation converts the structure to SOI wish excellent insulation property. Si islands with a width of 135㎛ and low doping concentration have been achieved.
엄재근(J. G. Eom),이추실(Q. S. Li),장성민(S. M. Jang),안순태(S. T. Ahn),손요헌(Y. H. Son),현성운(S. W. Hyun),김혁(H. Kim),윤덕재(D. J. Yoon),전만수(M. S. Joun) 한국소성가공학회 2009 한국소성가공학회 학술대회 논문집 Vol.2009 No.5
In this paper, plastic deformation behaviors of ESW105 and SCM435 steels are revealed by simulations and experiments. ESW105 is the special pre-heat-treated steel characterized by high initial yield strength and negligible strain-hardening behavior. The flow stresses of the two steels for large stain are calculated from tensile tests. Axial and lateral compressions of cylindrical bars are tested and simulated and the deformed shapes are compared to characterize the plastic deformation behaviors of the two materials. A forward extrusion process of a cylindrical bar is also simulated to reveal the difference. It has been shown that there are pretty much difference in plastic flow between ESW105 and SCM435 which causes from the difference in strain-hardening capability, implying that the experience-oriented design rules for common commercial materials may lead to failure in process design when the new material of ESW105 is applied without consideration of its plastic deformation behavior.
Tailoring the defects and carrier density for beyond 10% efficient CZTSe thin film solar cells
Li, J.,Kim, S.,Nam, D.,Liu, X.,Kim, J.,Cheong, H.,Liu, W.,Li, H.,Sun, Y.,Zhang, Y. North-Holland ; Elsevier Science Ltd 2017 Solar energy materials and solar cells Vol.159 No.-
The defects states and carrier density of CZTSe absorber layers are two of the crucial factors that decide the photovoltaic performance of CZTSe thin film solar cells. Fine tailoring the defects and carrier density is a key to push the power conversion efficiency of CZTSe solar cells to a more competitive level. In this work, the phase properties, defect states, and carrier density of CZTSe thin film are well controlled by fine tuning the ratio of Zn/Sn in the range from 0.75 to 1.27. Capacity-Voltage measurements and Admittance Spectroscopy are used to characterize the carrier density, depletion region width, and defect states of the CZTSe solar cells. The results indicate that the defects states and carrier density of CZTSe layer are very sensitive to the ratio of Zn/Sn. Combining experimental results and numerical simulation, the statistic regularities of the photovoltaic parameters of the CZTSe solar cells with different ratios of Zn/Sn is well explained. The increase of V<SUB>OC</SUB> of CZTSe solar cells with the ratio of Zn/Sn is related to both the increased carrier density and the decreased deep level defects states. The decline of J<SUB>SC</SUB> of the Zn-rich solar cells is caused by both the shrunken depletion region width and a large barrier caused by ZnSe phase. This barrier is the cause for a low fill factor in the Zn-rich solar cells. Overall, the CZTSe solar cells with a stoichiometric ratio of Zn/Sn=1.02 have favorable defects property and carrier density, thus resulting in the highest photovoltaic efficiency of 10.21%.